Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots

Fafard, S.; Leonard, D.; Merz, J. L.; Petroff, P. M.

doi:10.1063/1.112060

Cited by 161 publications

(82 citation statements)

References 11 publications

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“…On the contrary the PL lines in our sample broaden toward lower energies. Other authors have observed QD electron to WL hole state transitions in their PLE spectra, 16 in which case one certainly expects to observe an offset between the PL and PLE peaks. However, in our case the observed energy spacing between the p-and d-shell transitions is greater than that observed in the PL, whereas for QD to WL transitions that spacing should be smaller i.e., the spacing between the p-and d-shell QD electron states only.…”

Section: Resultsmentioning

confidence: 99%

“…In photoluminescence ͑PL͒ excitation ͑PLE͒ spectroscopy, one sets the detection energy over a narrow range within the GS transition and uses resonant optical excitation to create excitons one by one in an excited state of an empty QD. 15,16 By sweeping the excitation energy, one can trace variations in the GS signal and reconstruct the equivalent of an absorption spectrum. Moreover, by selecting a subset of the QD ensemble when using a narrow detection range, one reduces the effects of inhomogeneous broadening.…”

Section: Introductionmentioning

confidence: 99%

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Single-exciton energy shell structure in InAs/GaAs quantum dots

et al. 2008

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Single-exciton energy shell structure in InAs/GaAs quantum dots Awirothananon, S.; Raymond, S.; Studenikin, S.; Vachon, M.; Render, W.; Sachrajda, A.; Wu, X.; Babinski, A.; Potemski, M.; Fafard, S.; Cheng, S.J.; Korkusinski, M.; Hawrylak, P.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=21274614&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=21274614&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1103/PhysRevB.78.235313 Physical Review B -Condensed Matter and Materials Physics, 78, 23, 2008Single-exciton energy shell structure in InAs/GaAs quantum dots The energy shell structure of a single exciton confined in a self-assembled quantum dot ͑QD͒, including excited states, is studied in a regime where the direct Coulomb attraction energy is comparable to the kinetic energy of the carriers. This is achieved via magnetophotoluminescence excitation spectroscopy experiments, where a magnetic field applied perpendicular to the plane of the QD is used to reveal the angular-momentum content of energy shells. The absorption spectrum of the QDs is modeled, and comparison with experiment allows us to relate the observed transitions to interband QD bound-state transitions. The blueshift of the absorption peaks compared to the emission peaks is then interpreted in terms of many-body interactions, and we show that for a highly symmetric situation, the observed energy difference gives a direct measurement of the extra exchange energy gained upo...

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Single-exciton energy shell structure in InAs/GaAs quantum dots

et al. 2008

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“…[1][2][3] The exact determination of the indium concentration in the grown structure, however, is a problem, particularly after the final overgrowth of the islands with the GaAs cap layer. 4 In this letter we present a structural analysis of buried In x Ga 1Ϫx As islands by cross-sectional high-resolution transmission electron microscopy ͑HRTEM͒ after overgrowth with a GaAs cap layer.…”

Section: ͓S0003-6951͑97͒03029-5͔mentioning

confidence: 99%

Electron microscopic and optical investigations of the indium distribution in GaAs capped InxGa1−xAs islands

Woggon¹,

Langbein²,

Hvam³

et al. 1997

Applied Physics Letters

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Results from a structural and optical analysis of buried InxGa1−xAs islands carried out after the process of GaAs overgrowth are presented. It is found that during the growth process, the indium concentration profile changes and the thickness of the wetting layer emanating from a Stranski–Krastanow growth mode grows significantly. Quantum dots are formed due to strong gradients in the indium concentration, which is demonstrated by photoluminescence and excitation spectroscopy of the buried InInxGa1−xAs islands.

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“…First, the CdSe/ZnSe heterostructures can produce a light emission within the 460-530 nm spectral range and are characterized by a high luminescence efficiency, which makes them very perspective as a new active region of the light-emitting devices. Secondly, the CdSe/ZnSe heteropair is very similar to the well studied InAs/GaAs system employed for investigation of self-organizing quantum dots (QDs) [1], although it is more difficult to obtain the 3D quantum confinement in the (Zn,Cd)Se nanostructures because of the much smaller exciton Bohr radius (rB) (≈ 3 nm). Epitaxial growth of CdSe on ZnSe meets with a number of problems.…”

Section: Introductionmentioning

confidence: 99%

CdSe Layers of Below Critical Thickness in ZnSe Matrix: Intrinsic Morphology and Defect Formation

et al. 1998

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Three main stages of the intrinsic morphology transformation of MBE grown CdSe fractional monolayers in ZnSe with increase in their nominal thickness w in the 0.1-3.0 monolayer range were found using both structural and optical characterization techniques. Emergence of the extended (15-30 nm) CdSe-enriched quantum-dot-like pseudomorphic islands at w > 0.7 monolayer with the density increasing up to 2.5 x 10 10 cm-2 at w = 2.8 monolayer is clearly displayed in the optical properties of CdSe fractional monolayer nanostructures. The below critical thickness CdSe fractional monolayers having extremely high quantum efficiency can be very perspective as an active region of ZnSe-based blue-green lasers.

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Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots

Cited by 161 publications

References 11 publications

Single-exciton energy shell structure in InAs/GaAs quantum dots

Single-exciton energy shell structure in InAs/GaAs quantum dots

Electron microscopic and optical investigations of the indium distribution in GaAs capped InxGa1−xAs islands

CdSe Layers of Below Critical Thickness in ZnSe Matrix: Intrinsic Morphology and Defect Formation

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