2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) 2012
DOI: 10.1109/istdm.2012.6222452
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Selective Epitaxial Phosphorus-Doped SiGe Layers for Short-Channel Effect Reduction

Jeongwon Park1,
R. Balasubramanian2,
Amitabh Jain
3
et al.
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