Selective emitter formation process using single screen-printed phosphorus diffusion source

Üzüm, Abdullah; Hamdi, A.; Nagashima, S.; Suzuki, Shota; Suzuki, Hidenori; Yoshiba, Shuhei; Dhamrin, M.; Kamisako, K.; Sato, Hiroaki; Katsuma, K.; Kato, Kuniyasu

doi:10.1016/j.solmat.2012.11.013

Cited by 19 publications

(18 citation statements)

References 18 publications

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“…Other than POCl 3 diffusion, diluted orthophosphoric acid (H 3 PO 4 ) by spray [3,4], sol-gel sources through spin-on deposition techniques [5], or screen-printing technique [6] can be some alternatives.…”

Section: Introductionmentioning

confidence: 99%

Totally Vacuum-Free Processed Crystalline Silicon Solar Cells over 17.5% Conversion Efficiency

Üzüm

Kanda

Fukui³

et al. 2017

Photonics

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Abstract:In this work, we introduce a totally vacuum-free cost-efficient crystalline silicon solar cells. Solar cells were fabricated based on low-cost techniques including spin coating, spray pyrolysis, and screen-printing. A best efficiency of 17.51% was achieved by non-vacuum process with a basic structure of CZ-Si p-type solar cells. Short circuit current density (J SC ) and open circuit voltage (V OC ) of the best cell were measured as 38.1 mA·cm −2 and 596.2 mV, respectively with fill factor (FF) of 77.1%. Suns-Voc measurements were carried out and the detrimental effect of the series resistance on the performance was revealed. It is concluded that higher efficiencies are achievable by the improvements of the contacts and by utilizing good quality starting wafers.

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Section: Introductionmentioning

confidence: 99%

Totally Vacuum-Free Processed Crystalline Silicon Solar Cells over 17.5% Conversion Efficiency

Üzüm

Kanda

Fukui³

et al. 2017

Photonics

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“…After diffusion in ambient N 2 , N 2 +5%O 2 , and Ar, improvement of carrier lifetimes were observed for both type of wafers. After diffusion at 900°C in ambient N 2 , carrier lifetimes of CZ-Si p-type wafers reaches up to 350 μs from initial value of 200 μs [30].…”

Section: Impact On Carrier Lifetime Improvementmentioning

confidence: 99%

“…Due to the heavy O 2 flow during the diffusion may cause reoxidation of phosphorus atoms. Thus, limits the amount of phosphorus atoms to be diffused which results high sheet resistance [30]. As a conclusion of that, 100% O 2 ambient may not be suitable for quality emitter formation.…”

Section: Impact On Sheet Resistancementioning

confidence: 99%

“…One can conclude selective emitter structure can Figure 25. Principle of selective emitter formation process by single screen-printed phosphorus diffusion [30].…”

Section: Sheet Resistances Of Selective Emitter Structurementioning

confidence: 99%

“…Shallow regions under the illuminated area make it possible to have a better current collection properties and a low dark saturation current can be achieved by proper passivation applications [61,62]. In order to confirm the diffusion profile of selectively screenprinted phosphorus, secondary ion mass spectrometry (SIMS) analysis was performed [30]. which shows the effect of auto-diffusion to achieve selective emitter structure.…”

Section: Sheet Resistances Of Selective Emitter Structurementioning

confidence: 99%

See 2 more Smart Citations

Non-Vacuum Process for Production of Crystalline Silicon Solar Cells

Üzüm¹,

Ito²,

Dhamrin³

et al. 2017

New Research on Silicon - Structure, Properties, Technology

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Existing technologies for conventional high-efficient solar cells consist of vacuum-processed, high cost, sophisticated, and potentially hazardous techniques (POCl 3 diffusion, SiNx deposition, etc.) during crystalline silicon solar cell manufacturing. Alternative research studies of non-vacuum and cost-efficient processes for crystalline silicon solar cells are in continuous demand. However, there is not a well understanding of utilizing schemes and the achievable performances for such applications and techniques in solar cell fabrication. This chapter addresses the non-vacuum processes and applications for crystalline silicon solar cells. Such processes including spin coating and screen-printing phosphorus and boron diffusions for the formation of n+ and p+ emitter or back surface fields, spin coating and spray-deposited antireflection coatings for silicon solar cells. Application techniques were explained by combining and comparing experimental results with the calculation and simulations. Consequently, the aim of this chapter is to provide a good understanding of the non-vacuum processes for crystalline solar cells both with simulation and with experimental proves.

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Synthesis of silicon nanopowder from silane gas by RF thermal plasma

Lee

Kim

et al. 2013

Physica Status Solidi (a)

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Silicon nanopowder that can be applied as a selective emitter in solar cells was prepared from the decomposition of silane (SiH4) gas by a radio‐frequency (RF) thermal plasma. The RF thermal plasma offers a high‐temperature and contamination‐free environment to produce pure silicon material from SiH4. A steep temperature gradient in the thermal plasma enables the rapid quenching of decomposed material to synthesize nanosized particles. In this experiment, the input power of RF thermal plasma was controlled from 8 to 12 kW. The raw material of SiH4 gas was injected into an argon thermal plasma plume with argon carrier gas. Argon was also used as quenching gas to suppress the growth of silicon nanoparticles. In addition to the input power, the flow rates of carrier and quenching gases were employed as operating variables. The flow rates of carrier and quenching gases were controlled from 15 to 45 L min−1 and from 50 to 250 L min−1, respectively. Polycrystalline spherical silicon nanoparticles that were less than 100 nm in diameter were observed by transmission electron microscopy, Brunauer–Emmett–Teller (BET) surface area measurement, X‐ray diffractometry, and Raman spectrometry. Among the operating variables, the flow rate of carrier gas showed the most significant effect on the size of the nanopowder. The smallest mean particle size of 36 nm was obtained from the highest carrier gas flow rate of 45 L min−1, because the growth of nanopowder was limited by the enhanced axial velocity and quenching rate of in‐flight silicon nanopowder.

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Selective emitter formation process using single screen-printed phosphorus diffusion source

Cited by 19 publications

References 18 publications

Totally Vacuum-Free Processed Crystalline Silicon Solar Cells over 17.5% Conversion Efficiency

Totally Vacuum-Free Processed Crystalline Silicon Solar Cells over 17.5% Conversion Efficiency

Non-Vacuum Process for Production of Crystalline Silicon Solar Cells

Synthesis of silicon nanopowder from silane gas by RF thermal plasma

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