Selective effect of ion/surface interaction in low frequency PACVD of SIC:H films: Part B. Microstructural study

Soum‐Glaude, Audrey; Thomas, L.; Tomasella, Éric; Badie, J. M.; Berjoan, R.

doi:10.1016/j.surfcoat.2005.11.076

Cited by 42 publications

(35 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These a-SiC:H thin film coatings can effectively be fabricated from a number of volatile organosilicon precursors by plasma CVD techniques which include conventional (or direct) plasma (P)CVD, [1][2][3][4][5][6] as well as remote hydrogen plasma (RHP)CVD. [7][8][9][10][11][12][13][14] In view of the results of our earlier studies [7][8][9][10][11][12][13][14] the latter technique is particularly beneficial for the formation of high quality aSiC:H films with unique properties.…”

Section: Introductionmentioning

confidence: 99%

Properties of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2

Walkiewicz-Pietrzykowska

Wróbel

Glebocki

2009

Chemical Vapor Deposition

View full text Add to dashboard Cite

The surface morphology and physical (density), optical (refractive index), and mechanical (hardness, elasticity) properties of amorphous hydrogenated silicon carbide (a-SiC:H) films produced by remote microwave hydrogen plasma (RHP)CVD from a triethylsilane precursor are investigated. The effect of substrate temperature (varied in the range T s ¼ 30-400 8C) on the properties of a-SiC:H films is reported. In view of the atomic force microscopy (AFM) examination the films were found to be morphologically homogeneous materials exhibiting small surface roughness which varies with T s in a narrow range of values (1.0-1.5 nm). The relationships between the film compositional parameter, expressed by the atomic concentration ratio Si/C, and structural parameter described by the relative integrated intensities of the absorption IR band from the Si-C bonds (controlled by substrate temperature) are examined. On the basis of the results of these examinations, reasonable compositional and structural dependencies of film properties are determined. The properties of investigated a-SiC:H films are compared with those reported in the literature for films produced from various organosilicon precursors by different CVD techniques. Due to their good mechanical properties a-SiC:H films produced in a high substrate temperature regime (T s ¼ 300-400 8C) seem to be useful as protective coatings improving the surface mechanics of various engineering materials.

show abstract

Section: Introductionmentioning

confidence: 99%

Properties of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2

Walkiewicz-Pietrzykowska

Wróbel

Glebocki

2009

Chemical Vapor Deposition

View full text Add to dashboard Cite

show abstract

“…It is also noticed that the Si-O-Si stretching band is consisted of two bands and are located at about 1080 cm − 1 and 1100 cm − 1 [11]. In additional, Si-O asymmetric stretching and C-C stretching bonds are detectable at around 1170 cm − 1 and 1200 cm − 1 [10]. As a whole, it can be seen that the intensities of the spectra for every sample are becoming less significant as the annealing temperature is increased.…”

Section: Methodsmentioning

confidence: 85%

“…The vibrations of individual atoms within the molecules, such as stretching, bending and rocking modes, could be obtained from Fourier transform infra-red (FTIR) analysis using Perkin Elmer Fourier transform infra-red system. [10]. It is also noticed that the Si-O-Si stretching band is consisted of two bands and are located at about 1080 cm − 1 and 1100 cm − 1 [11].…”

Section: Methodsmentioning

confidence: 89%

Effects of heat treatment in vacuum on the physical properties of thermal nitrided silicon dioxide gate on 4H-silicon carbide

et al. 2008

View full text Add to dashboard Cite

“…Plasma decomposition of tetramethylsilane (Si(CH 3 ) 4 ; TMS) has been frequently used to fabricate thin films of hydrogenated amorphous silicon carbide (a-SiC x :H) which are expected as the hard protective coating materials [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Dissociative Excitation Reaction of Tetramethylsilane with Microwave Discharge Flow of Ar

Ito

Gappa

2013

Trans. Mat. Res. Soc. Japan

View full text Add to dashboard Cite

Tetramethylsilane was decomposed in the microwave discharge flow of Ar to produce emission spectra of the CH(A 2 X 2 ) and Si(4s3p) transitions. The mechanisms of the production of the excited states were studied by the combined analysis of the laser-induced fluorescence (LIF) spectroscopy of the 3 P 0 metastable state of Ar and electrostatic-probe measurements. The pressure of Ar was varied in the range of 0.2-0.4 Torr; the density of Ar( 3 P 0 ), n M , and the density, n e , and temperature, T e , of free electrons were varied. By comparing the Ar-pressure dependencies of the emission intensities, n M , n e , and T e with the support of a kinetic analysis, the production processes of CH(A 2 ) and Si(4s) states were found predominantly to be the energy transfer from the metastable state of Ar atoms.

show abstract

Selective effect of ion/surface interaction in low frequency PACVD of SIC:H films: Part B. Microstructural study

Cited by 42 publications

References 40 publications

Properties of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2

Properties of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2

Effects of heat treatment in vacuum on the physical properties of thermal nitrided silicon dioxide gate on 4H-silicon carbide

Analysis of Dissociative Excitation Reaction of Tetramethylsilane with Microwave Discharge Flow of Ar

Contact Info

Product

Resources

About