Selective Dry Etching of HfO2 in CF4, Cl2 and HBr Based Chemistry

Maeda, Takeshi; Ito, Hiroyuki; Mitsuhashi, Riichiro; Horiuchi, Atsushi; Kawahara, T.; Muto, Akiyoshi; Sasaki, Takaoki; Torii, Kazuyoshi; Kitajima, Hiroshi

doi:10.7567/ssdm.2003.d-10-4

Cited by 2 publications

(3 citation statements)

References 4 publications

(4 reference statements)

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“…Suitable etching chemistries are: ‫݈ܥܤ‬ ଷ ‫݈ܥ/‬ ଶ /Ar for ‫݈ܣ‬ ଶ ܱ ଷ layers, which has an etching rate of about 100Å/min, HBr/Cl/Ar for Hafnium Oxide layers [9], and, BCl ଷ /Ar for Aluminium Nitride.…”

Section: Experimental Processing Detailsmentioning

confidence: 99%

Fully etched grating couplers for atomic layer deposited horizontal slot waveguides

Naiini

Malm

Östling

2011

Ulis 2011 Ultimate Integration on Silicon

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Compact broadband grating couplers are designed and studied utilizing Atomic Layer Deposited Horizontal Slot waveguides, with four well-known material layers as the slot. Fabrication process conditions are experimentally studied to obtain more optimized designs. With the precision of the film thickness and refractive index provided by ALD, fabrication of reproducible grating couplers is feasible. An overview of design guidelines regarding the slot size and slot material is provided by 2D Finite Element Method calculations.

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Section: Experimental Processing Detailsmentioning

confidence: 99%

Fully etched grating couplers for atomic layer deposited horizontal slot waveguides

Naiini

Malm

Östling

2011

Ulis 2011 Ultimate Integration on Silicon

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show abstract

“…A wide variety of chemistries have been tried for the etching of high-k metal oxides such as HfO 2 and ZrO 2 . [4][5][6][7][8][9][10][11][12] These studies have revealed that etching of these materials is dominated by momentum transfer from the ions to the surface atoms in most cases. [7][8][9] An etch selectivity toward Si of 10 and higher has been reported.…”

Section: Introductionmentioning

confidence: 99%

“…[4][5][6][7][8][9][10][11][12] These studies have revealed that etching of these materials is dominated by momentum transfer from the ions to the surface atoms in most cases. [7][8][9] An etch selectivity toward Si of 10 and higher has been reported. 12,13 Furthermore, Sha et al 5 have reported that a functional transistor could be built with HfO 2 as a gate dielectric with the pattern transferring using a BCl 3 plasma.…”

Section: Introductionmentioning

confidence: 99%

Ion-radical synergy in HfO2 etching studied with a XeF2/Ar+ beam setup

Gevers

Beijerinck

Sanden

et al. 2008

Journal of Applied Physics

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To gain more insight into fundamental aspects of the etching behavior of Hf-based high-k materials in plasma etch reactors, HfO2 films were etched in a multiple-beam setup consisting of a low energy Ar+ ion beam and a XeF2 radical beam. The etch rate and etch products were monitored by real-time ellipsometry and mass spectrometry, respectively. Although etching of HfO2 in XeF2/Ar+ chemistry is mainly a physical effect, an unambiguous proof of the ion-radical synergistic effect for the etching of HfO2 is presented. The etch yield for 400 eV Ar+ ions at a substrate temperature of 300 °C was 0.3 atoms/ion for Ar+ sputtering and increased to 2 atoms/ion when XeF2 was also supplied. The etch yield proved to follow the common square root of ion energy dependence both for pure sputtering and radical enhanced etching, with a threshold energy at room temperature of 69±17 eV for Ar+ ions and 54±14 eV for Ar+ ions with XeF2.

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Selective Dry Etching of HfO2 in CF4, Cl2 and HBr Based Chemistry

Cited by 2 publications

References 4 publications

Fully etched grating couplers for atomic layer deposited horizontal slot waveguides

Fully etched grating couplers for atomic layer deposited horizontal slot waveguides

Ion-radical synergy in HfO2 etching studied with a XeF2/Ar+ beam setup

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