Selective Disordering of InGaAs Strained Quantum Well by Rapid Thermal Annealing with SiO<sub>2</sub> Caps of Different Thicknesses for Photonic Integration

Shimada, N.; Fukumoto, Yukio; Uemukai, Masahiro; Suhara, Toshiaki; Nishihara, Hiroshi; Larsson, Anders

doi:10.1143/jjap.39.5914

Cited by 10 publications

(6 citation statements)

References 8 publications

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“…By using selective area QW disordering, the absorption loss in the DBR grating region can be significantly reduced to ¼ 3 cm À1 . 4) The dependence of the DBR reflectivity R DBR and the wavelength bandwidth Á! on the coupling coefficient was calculated for L ¼ 200 mm and ¼ 3 cm À1 .…”

Section: Device Description and Designmentioning

confidence: 99%

“…Selective area QW disordering was performed by rapid thermal annealing (RTA) using SiO 2 caps of different thicknesses. 4,5) SiO 2 caps of 300-nm and 30-nm thickness were deposited by plasma chemical vapor deposition for the disordering and suppressing caps, respectively. Then RTA was performed at 860 C for 60 s and the both SiO 2 caps were removed by buffer etching.…”

Section: Device Fabricationmentioning

confidence: 99%

“…This can be done by selective-area quantum well disordering by rapid thermal annealing with SiO 2 caps of different thicknesses. 4,5) To enhance external quantum efficiency and spectrum purity, the DBR grating must be optimized for both high reflectivity and sharp wavelength selectivity. Furthermore, low-reflection coating on a front facet would enhance the efficiency and improve catastrophic optical damage (COD) threshold level.…”

Section: Introductionmentioning

confidence: 99%

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High-Efficiency InGaAs/AlGaAs Quantum Well Distributed Bragg Reflector Laser with Curved Grating

Uemukai¹,

Kitano²,

Shimada³

et al. 2004

Jpn. J. Appl. Phys.

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Section: Device Description and Designmentioning

confidence: 99%

Section: Device Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-Efficiency InGaAs/AlGaAs Quantum Well Distributed Bragg Reflector Laser with Curved Grating

Uemukai¹,

Kitano²,

Shimada³

et al. 2004

Jpn. J. Appl. Phys.

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“…9 Rapid thermal annealing of InGaAs/GaAs quantum wells also results in a blue shift of the PL spectrum due to intermixing at the well-barrier interface. 12 In contrast, double crystal x-ray diffraction measurements made on a In 0.20 Ga 0.80 As/GaAs multiquantum well sample, grown by MBE and subjected to pulsed laser annealing, show no evidence of wellbarrier interdiffusion. Figure 2a and b shows the integrated PL intensity variation for pulse laser annealed and rapid thermal annealed InAs/GaAs quantum dots.…”

mentioning

confidence: 94%

Pulsed laser annealing of self-organized InAs/GaAs quantum dots

Chakrabarti

Fathpour

Moazzami

et al. 2004

Journal of Elec Materi

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The effect of pulsed laser annealing (PLA), using an excimer laser, on the luminescence efficiency of self-organized InAs/GaAs and In 0.4 Ga 0.6 As/GaAs quantum dots has been investigated. It is found that such annealing can enhance both the peak and integrated photoluminescence (PL) efficiency of the dots, up to a factor of 5-10 compared to as-grown samples, without any spectral shift of the luminescence spectrum. The improved luminescence is attributed to the annealing of nonradiative point and extended defects in and around the dots.Self-organized quantum dots (QDs), grown by molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy, 1-5 have emerged as the zerodimensional system of choice for fundamental investigations and device applications. Indeed, high-performance quantum dot lasers have been reported 6 and other optoelectronic and electronic devices also incorporate self-organized quantum dots as the active material. 7 The coherently strained islands are formed via the Stranski-Krastanow growth mode for lattice mismatches larger than 1.8-2.0%. 8 . It is known that the luminescent and other optical properties of the quantum dots are very sensitive to growth parameters. Additionally, it has been observed that postgrowth annealing, 9-11 either in the epitaxy environment or in an external open-tube furnace or rapid thermal anneal (RTA) system, enhances the luminescence efficiency of the quantum dots. This is believed to be due to the annealing of nonradiative defects and, to a small extent, due to a reduction in the QD size distribution. However, the enhancement in luminescence efficiency is accompanied by a spectral shift of the luminescence peak, mainly due to interdiffusion. The latter is undesirable in the design and proper operation of devices requiring strict tolerances on operating wavelength, such as distributed feedback lasers and vertical cavity surface emitting lasers (VCSELs). It is, therefore, useful to explore alternate techniques of heat treatment wherein shifts of the luminescence peak can be minimized or eliminated. In this paper, we describe the characteristics of self-organized quantum dots annealed by nanosecond pulsed laser heating using an excimer laser. It is found that such processing results in a larger improvement in dot luminescence, compared to RTA, without any noticeable spectral shift of the luminescence peak.Undoped samples consisting of InAs/GaAs and In 0.4 Ga 0.6 As/GaAs QDs were grown on (001) semiinsulating GaAs substrates by solid source MBE. Growth was initiated with a 0.1-µm thick GaAsbuffer layer. The samples contained varying numbers of QD layers ranging from 2 to 5. The 500 Å GaAs barrier in between the dot layers was grown in two steps. The initial 250 Å of the barrier was deposited under increasing substrate temperature in the range 490-580°C. The growth was then interrupted for 60 sec. The final 250 Å of the barrier was grown under decreasing substrate temperature in the range 580-490°C. The InAs and In 0.4 Ga 0.6 As QDs were grown at a rate of 0.1 and 0.27...

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“…From all of our IFVD results, blueshift is always observed. From the literature, bandgap blueshift with SiO 2 -capped IFVD is also reported by other researchers [7,11,106,133,[137][138]. This probably because: under the SiO 2 layer, the gallium atom of the top layer will out-diffuse into the cap layer and cation vacancies are generated, while the SiO 2 cap layer itself also contains certain amount of anion vacancies due to its porosity [138].…”

Section: Resultsmentioning

confidence: 52%

Device building blocks for photonic integration : design and process

Lee¹

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First of all, I would like to express my gratitude to Associate Professor Chin Mee Koy. His encouragement and guidance throughout the course of my study have been an important factor for me in completing my project. I am grateful to Professor Chua Soo Jin from the Institute of Material Research and Engineering (IMRE). His advice and time spent in the project discussion have been very motivating for the progress of my project. I also appreciate the invaluable assistance from Dr. Teng Jing Hua, who also from IMRE, for the generous sharing of his technical knowledge and research material with me. Special thanks to Associate Professor Mei Ting and Assistant Professor Tang Xiaohong at the same time, for their kind assistance in my project. I would like to thank Ms. Lee Shuh Ying as well, for the fruitful discussion and the sharing of her expertise in waveguide measurement. The project would not have completed without her helping hand. Much appreciation is expressed to Mr. Stevanus

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Selective Disordering of InGaAs Strained Quantum Well by Rapid Thermal Annealing with SiO₂ Caps of Different Thicknesses for Photonic Integration

Cited by 10 publications

References 8 publications

High-Efficiency InGaAs/AlGaAs Quantum Well Distributed Bragg Reflector Laser with Curved Grating

High-Efficiency InGaAs/AlGaAs Quantum Well Distributed Bragg Reflector Laser with Curved Grating

Pulsed laser annealing of self-organized InAs/GaAs quantum dots

Device building blocks for photonic integration : design and process

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Selective Disordering of InGaAs Strained Quantum Well by Rapid Thermal Annealing with SiO2 Caps of Different Thicknesses for Photonic Integration

Cited by 10 publications

References 8 publications

High-Efficiency InGaAs/AlGaAs Quantum Well Distributed Bragg Reflector Laser with Curved Grating

High-Efficiency InGaAs/AlGaAs Quantum Well Distributed Bragg Reflector Laser with Curved Grating

Pulsed laser annealing of self-organized InAs/GaAs quantum dots

Device building blocks for photonic integration : design and process

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Selective Disordering of InGaAs Strained Quantum Well by Rapid Thermal Annealing with SiO₂ Caps of Different Thicknesses for Photonic Integration