Selective chemical vapor deposition of copper on AZ 5214™-patterned silicon substrates

Davazoglou, Dimitris; Vidal, S.; Gleizes, Alain

doi:10.1116/1.1362680

Cited by 8 publications

(5 citation statements)

References 8 publications

(2 reference statements)

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“…After these treatments the photo-resist was found to maintain its initial shape and dimensions and was still removable after (the long-lasting) Cu deposition. Lines with dimensions down to 800 nm were then obtained (8). In this work, due to the Figure 2.…”

Section: Resultsmentioning

confidence: 98%

“…Therefore the process was not very repeatable. After this initial work, a second one has followed (8) aiming at the optimization of the photo-resist using flood exposures at various times and additional bake steps after development (8) in order to destroy the photo-sensitive parts contained in the AZ5214 TM . After these treatments the photo-resist was found to maintain its initial shape and dimensions and was still removable after (the long-lasting) Cu deposition.…”

Section: Resultsmentioning

confidence: 99%

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Fabrication of Micro- and Nano-electrodes by Selective Chemical Vapor Deposition of Cu on Si Substrates Patterned with AZ5214{trade mark, serif} and PMMA

et al. 2009

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Planar Cu electrodes with high length (starting from 1 mm down to 50 μm) and fine widths dimensions (starting from 20 μm and going down to 100 nm) were fabricated using selective chemical vapour deposition (SCVD) of the metal. For the fabrication, oxidized Si substrates were used on which a TiN layer was deposited and patterned either with AZ5214TM, for width dimensions of the order of microns, or by PMMA for lower dimensions. Then, Cu was deposited by SCVD on the exposed regions of the substrate only. Finally, the remaining polymers and the TiN were removed in acetone and by plasma etching, respectively. Due to the advanced CVD equipment used the above fabrication method proved to be robust, reproducible and with a high yield. The use of such equipment also assures a quite wide process window and inhibits the intrusion of other parameters which are known to destroy Cu SCVD.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Fabrication of Micro- and Nano-electrodes by Selective Chemical Vapor Deposition of Cu on Si Substrates Patterned with AZ5214{trade mark, serif} and PMMA

et al. 2009

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“…At temperatures above 650°C the Cu deposits were very resistive. All depositions were made on 3 inch, oxidized, (100) silicon substrates covered with LPCVD W [6,7], TiN (sputter deposited), and SiLK ® layers. These substrates were chosen because films of tungsten, titanium, and their compounds are frequently used as barriers against Cu diffusion and seed layers for deposition of this metal on insulating films.…”

Section: Methodsmentioning

confidence: 99%

“…It is also noted that Cu I precursors offer the advantage of selective CVD under specific deposition conditions. [1,[5][6][7] However, the problems of poor adhesion and non-conformal deposition on insulating surfaces have remained unsolved. In a previous work we obtained Cu patterns on Si substrates by selectively depositing the metal on a patterned insulating layer containing tungsten.…”

Section: Introductionmentioning

confidence: 99%

Copper Films Deposited by Hot‐Wire CVD and Direct Liquid Injection of CupraSelect

Papadimitropoulos

Davazoglou

2007

Chemical Vapor Deposition

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Copper films are deposited on Si substrates covered with W, TiN, and SiLK ® using a novel CVD reactor in which reactions are assisted by a heated tungsten filament (hot-wire (HW)CVD). Liquid hexafluoroacetylacetonate Cu I trimethylvinylsilaneis directly injected at room temperature into the reactor with the aid of a direct liquid injection system using N 2 as the carrier gas. The deposition rates of HWCVD Cu films obtained on W and TiN covered substrates are found to increase with filament temperature (65 and 170°C are used). Moreover, high quality Cu films are deposited on SiLK ® , which cannot be done by conventional thermal CVD. Independent of the nature of the substrate, resistivities of HWCVD Cu films are higher than for thermally grown films due to carbon and oxygen contamination caused by the incomplete dissociation of the precursor. W impurities are detected in the HWCVD Cu films confined near the interface Cu film/substrate due to the presence of the filament. Their presence does not, however, degrade catastrophically the film conductivity.

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“…One is selective deposition (high selectivity), which has been investigated for Cu. 8) This is effective for thin film deposition but not suitable for thick films, because selectivity in the deposition rate depends highly on the surface of the substrate, so that high selectivity is difficult to obtain for thick films. The other is patterning of the desirable property (not the deposition itself), meaning the patterning of the region with ferroelectricity/piezoelectricity and non-ferroelectricity/piezoelectricity even if the entire area was covered by the film.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O₃ Film by Metalorganic Chemical Vapor Deposition

Yokoyama¹,

Takahashi²,

Okada³

et al. 2006

jjap

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Pb(Zr,Ti)O 3 (PZT) films were prepared on Si substrates at 600 C by metalorganic chemical vapor deposition (MOCVD). Crystallinity of tetragonal PZT film was dramatically increased by making Pt bottom electrode layer on the Si substrate. Based on this observation, we succeeded in directly patterning PZT films having quite different crystal quality, i.e., well-crystallized (100)-/(001)-preferentially-oriented ones, and poorly-crystallized randomly-oriented ones, by pre-patterning Pt bottom electrodes. The achievement of the patterning of PZT films down a size of 1 mm was determined by scanning probe microscopy using a piezoresponse technique. As a result, we demonstrated the direct patterning of PZT films on Si substrates for the first time and introduced the possibility of directly patterning PZT films with good piezoelectric properties without post-deposition processes such as etching.

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Selective chemical vapor deposition of copper on AZ 5214™-patterned silicon substrates

Abstract: Fabrication of very fine copper lines on silicon substrates patterned with poly(methylmethacrylate) via selective chemical vapor deposition Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization

Cited by 8 publications

References 8 publications

Fabrication of Micro- and Nano-electrodes by Selective Chemical Vapor Deposition of Cu on Si Substrates Patterned with AZ5214{trade mark, serif} and PMMA

Fabrication of Micro- and Nano-electrodes by Selective Chemical Vapor Deposition of Cu on Si Substrates Patterned with AZ5214{trade mark, serif} and PMMA

Copper Films Deposited by Hot‐Wire CVD and Direct Liquid Injection of CupraSelect

Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O₃ Film by Metalorganic Chemical Vapor Deposition

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Selective chemical vapor deposition of copper on AZ 5214™-patterned silicon substrates

Abstract: Fabrication of very fine copper lines on silicon substrates patterned with poly(methylmethacrylate) via selective chemical vapor deposition Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization

Cited by 8 publications

References 8 publications

Fabrication of Micro- and Nano-electrodes by Selective Chemical Vapor Deposition of Cu on Si Substrates Patterned with AZ5214{trade mark, serif} and PMMA

Fabrication of Micro- and Nano-electrodes by Selective Chemical Vapor Deposition of Cu on Si Substrates Patterned with AZ5214{trade mark, serif} and PMMA

Copper Films Deposited by Hot‐Wire CVD and Direct Liquid Injection of CupraSelect

Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O3 Film by Metalorganic Chemical Vapor Deposition

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Resources

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Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O₃ Film by Metalorganic Chemical Vapor Deposition