Selective Backscattered Electron Imaging of Material and Channeling Contrast in Microstructures of Scale on Low Carbon Steel Controlled by Accelerating Voltage and Take-off Angle

Aoyama, Tomohiro; Nagoshi, Masayasu; Nagano, Hideki; Sato, Kaoru; Tachibana, Shigeaki

doi:10.2355/isijinternational.51.1487

Cited by 33 publications

(14 citation statements)

References 9 publications

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Contrasting

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“…The contrasts certainly change according to not only the type of detector but also experimental conditions such as primary electron energy. [2,3,5] These have given uncertainly to the guiding principle to determine the experimental conditions including the selection of detectors. We have investigated the contrasts in the SEM images using relatively simple annular type IL-type detectors under several experimental conditions such as working distance (WD) in order to extract topographic and material information.…”

Section: Introductionmentioning

confidence: 99%

Simple separations of topographic and material contrasts using one annular type in‐lens detector of low‐voltage SEM

Nagoshi¹,

Kawano²,

Sato³

2015

Surface & Interface Analysis

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Contrasts of low-voltage secondary electron microscope images have been experimentally investigated using commercial instruments having an annular type in-lens (IL) detector. The topographic and material contrasts of oxide particles on steel surfaces in the secondary electron microscope images recorded by the IL and the Everhart-Thonley detectors systematically change as a function of working distance. It is found that these two contrasts are divided using the different concentric areas of the IL detector surface. These results are discussed in terms of the kinetic energy of the detected electrons. Two simple methods for the information selection using one IL-type detector are proposed.

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Section: Introductionmentioning

confidence: 99%

Simple separations of topographic and material contrasts using one annular type in‐lens detector of low‐voltage SEM

Nagoshi¹,

Kawano²,

Sato³

2015

Surface & Interface Analysis

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“…It is known that the collection angle sustained by a BSE detector influences the contrast of the resulting BSE image, as recently reported by Aoyama and co-workers [33,34]. The raw signal collected by an EBSD detector reflects the angular distribution of the backscattered and forwarded electrons from a highly tilted specimen under electron bombardment.…”

Section: Compositional Imagingmentioning

confidence: 80%

Imaging with a Commercial Electron Backscatter Diffraction (EBSD) Camera in a Scanning Electron Microscope: A Review

2018

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Abstract:Scanning electron microscopy is widespread in field of material science and research, especially because of its high surface sensitivity due to the increased interactions of electrons with the target material's atoms compared to X-ray-oriented methods. Among the available techniques in scanning electron microscopy (SEM), electron backscatter diffraction (EBSD) is used to gather information regarding the crystallinity and the chemistry of crystalline and amorphous regions of a specimen. When post-processing the diffraction patterns or the image captured by the EBSD detector screen which was obtained in this manner, specific imaging contrasts are generated and can be used to understand some of the mechanisms involved in several imaging modes. In this manuscript, we reviewed the benefits of this procedure regarding topographic, compositional, diffraction, and magnetic domain contrasts. This work shows preliminary and encouraging results regarding the non-conventional use of the EBSD detector. The method is becoming viable with the advent of new EBSD camera technologies, allowing acquisition speed close to imaging rates. This method, named dark-field electron backscatter diffraction imaging, is described in detail, and several application examples are given in reflection as well as in transmission modes.

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“…It should be emphasized that effective use of wide range primary electron energy, including the ultra-low voltage lower than 1 keV, is important to obtain multiple information of surfaces. Various information, such as crystallographic and atomic-number information, involved in backscattered electron (BSE) images are also extracted by controlling take-off angle and primary electron energy including low values [10,11]. Elemental analysis for surface layers with the thickness of a few nanometers also become possible when energy dispersive x-ray spectrometer (EDX) is combined with LV-SEM [12].…”

Section: Introductionmentioning

confidence: 99%

Low-Voltage Scanning Electron Microscopy as a Tool for Surface Imaging and Analysis of Practical Materials

Nagoshi¹,

Sato²,

Aoyama³

2017

JSA

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Low-voltage scanning electron microscopy (LV-SEM), imaging and energy dispersive x-ray spectroscopy (EDX) analysis, have been applied to steel surfaces in order to clarify the performance of these techniques as a surface analysis. The information depth of LV-SEM imaging is limited by the penetration range of primary electrons. The range also limits the information depth of LV-SEM-EDX analysis. These situations are quite different from those of surface analysis techniques such as Auger electron microscopy in which the escape depth of signal electrons determines the information depth. The information depths of both LV-SEM imaging and LV-SEM-EDX analysis are an order of 10 nm for the primary electron energy of around 1 keV. We can obtain topographic, material, and elemental information from such shallow region of material surfaces with high spatial resolution. This shows that the techniques are applicable to surface analysis of practical materials although the information depth is still deeper by one order than those of the conventional surface analysis techniques.

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Selective Backscattered Electron Imaging of Material and Channeling Contrast in Microstructures of Scale on Low Carbon Steel Controlled by Accelerating Voltage and Take-off Angle

Cited by 33 publications

References 9 publications

Simple separations of topographic and material contrasts using one annular type in‐lens detector of low‐voltage SEM

Simple separations of topographic and material contrasts using one annular type in‐lens detector of low‐voltage SEM

Imaging with a Commercial Electron Backscatter Diffraction (EBSD) Camera in a Scanning Electron Microscope: A Review

Low-Voltage Scanning Electron Microscopy as a Tool for Surface Imaging and Analysis of Practical Materials

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