Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission

Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2

“…The transport of precursors during growth on planar 2D masks has been analyzed in detail [8,16,[21][22][23][24], however the use of three dimensional masks, i.e. confinement of growth in both in-plane and out-of-plane directions, has been the subject to fewer studies [5,9,14].…”

“…Growth profiles have been accurately predicted by gas phase diffusion models over a wide range of mask sizes and growth reactor conditions by use of D=k s ratio [8], or the Damköhler number [16].…”

“…In this process, the surface of a wafer is patterned with a dielectric mask by lithography, followed by selective epitaxy enabled by the diffusive transport of reactants to the openings (windows) of the mask. The technique of SAG has been exploited for the reduction of crystalline defects such as dislocations [1,2], heterogeneous integration [3][4][5], for the creation of novel nanostructures [6], and achieving desired gradient effects not possible in conventional growth [7,8].…”

“…The constriction in the cross-section of material growth in channel confined SAG is of particular importance in alleviating the problems of heavily-mismatched epitaxy, in molding the SAG crystals into designed configurations, and, most recently, in enabling a novel non-epitaxial preparation of single-crystalline semiconductor on amorphous templates through evolutionary selection (ES) growth [15]. While the growth processes in planar SAG have been well investigated [8,16], imposing the physical boundaries of the scale used in channel confined SAG has not been analyzed in detail. In this work, we have used specially-fabricated, twodimensionally confined growth tunnels, developed for ES growth of GaN on SiO 2 , [15] as a platform to study the gas-phase transport phenomena within the construct of "micro-reactors on a chip", where the mean free path of metal-organic chemical vapor deposition (MOCVD) is typically within the range of the feature sizes desired [17].…”

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

“…Recently, III-nitride semiconductors have been widely employed for energy-efficiency device technologies, including light-emitting diodes (LEDs) for solid state lighting [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19], visible diode lasers for both display and biosensing [20][21][22][23][24][25][26], photovoltaics and solar energy conversion [27][28][29], and thermoelectric heat conversion and active cooling materials [30][31][32][33][34][35][36][37][38][39]. In designing structures in nitride-based devices for photonics and electronics applications, the most-widely studied heterostructures have been primarily limited to AlGaN/GaN and InGaN/GaN configurations.…”