Selective area MBE of GaAs, AlAs and their alloys by periodic supply epitaxy

Selective Area Masked Growth (Nano to Micro)

“…SAG using electron-cyclotron-resonance plasma-excited MBE was reported by Yamamoto et al in 1991 [125]. GaAs, AlAs, and AlGaAs SAG using periodic supply epitaxy by MBE was done by Nishinaga and Bacchin in 2000 [127]. GaAs, AlAs, and AlGaAs SAG using periodic supply epitaxy by MBE was done by Nishinaga and Bacchin in 2000 [127].…”

Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

“…Another technique for the successful achievement of SAE has been the technique called migration enhanced epitaxy (MEE), in which the group III and group V precursors are deposited in separate steps [7][8][9]. Little work has been realized up to now for the SAE of other III-V materials such as InP, InAs and AlAs, though some initial results were achieved by Bacchin and Nishinaga [10,11] by periodic supply epitaxy, a similar technique to MEE. Even if some models have been presented to realize the mechanism of SAE, investigations for a more detailed understanding are still missing.…”

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

“…18,19 Several approaches have been introduced to improve the reliability and growth rates of this selective area MBE process, including the use of activated species, 20 focused ion beams, 21 and precursor flux pulsing. 22 Selectivity with other PVD techniques, like sputtering, has been reported, but these typically require a narrow process window of deposition rate and substrate temperature. 23 In this paper, we describe a new MBE process for the SAE growth of MgO epilayers on gallium nitride surfaces.…”