Selective area heteroepitaxy of low dimensional a ‐plane and c ‐plane InGaN nanostructures using pulsed MOCVD

Abstract

High density a ‐plane and c ‐plane InGaN nanostructures have been developed by nanoscale selective area epitaxial growth using pulsed MOCVD. SiO2 was used as a mask with nanopatterning through an anodic aluminum oxide template. The lateral dimensions of the pattern were controlled and varied from 30 nm to 180 nm by changing the anodization voltage and the electrolyte. Different substrates such as a ‐plane GaN on r ‐plane sapphire, r ‐plane sapphire and c ‐plane sapphire were used to develop InGaN nanostructures in a ‐ and c ‐ crystallographic directions respectively. Under identical growth conditions, InGaN nanostructures of various shapes were obtained on different substrates with differences in emission wavelength. The shape of the nanostructures on different substrates is discussed with respect to the stability and growth rates of various planes. However, the difference in emission wavelength is attributed to the In incorporation in the nanostructures. The optical properties of the nanostructures were studied by photoluminescence (PL) spectroscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy

“…In the growth of GaN quantum dots (QDs) and other structures by selective area epitaxy, the growth velocity can be strongly dependent on crystallographic orientation [21][22][23][24][25][26][27][28]. The growth velocity as a function of orientation can be represented schematically with the so-called v-plot, which is a plot of the growth velocity as a function of the surface orientation.…”

High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

“…The NSAG approach involves application of thin dielectric SiO 2 masks on the substrate surface that are patterned with nanoopenings (10–100 nm) where nanostructures will be grown. Previously reported mask nanopatterning processes consist of multiple deposition steps and complex process steps including reactive ion and plasma etching . In this paper, we have used a simple, industry friendly, patterning process.…”

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

“…13 Using metal organic chemical vapor deposition (MOCVD), which is used for industrial production of Light Emitting Diodes (LEDs), both GaN and InGaN nanostructures have been obtained on GaN templates. Good quality, InGaN nanostructures with around 20% In incorporation have been selectively grown on the GaN templates by either pulsing the precursors, [14][15][16] or using the continuous precursors flow method. 17,18 On silicon substrates, GaN Nano-Selective Area Growth (NSAG) has been demonstrated previously by MOCVD.…”