Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement

Fahed, Maria; Desplanque, L.; Tománek, David; Patriarche, G.; Wallart, X.

doi:10.1088/0957-4484/27/50/505301

Cited by 31 publications

(40 citation statements)

References 41 publications

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“…From an MBE growth perspective, using GaSb NMs, already described by other groups, to grow InSb NWs would be interesting due to the higher g-factor of InSb. 19,47 Alternatively, suitable plastic strain relaxation, for example by interfacial misfit array formation, 48 Contacting. Contacts were patterned by e-beam lithography followed by dual-angle evaporation of 14/80 nm of Cr/Au for good side-wall coverage.…”

Section: Discussionmentioning

confidence: 99%

Template-Assisted Scalable Nanowire Networks

et al. 2018

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Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing.

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Section: Discussionmentioning

confidence: 99%

Template-Assisted Scalable Nanowire Networks

et al. 2018

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“…[ 29 ] The out‐of‐plane grown NW structures, however, need to be transferred from the growth wafer to a second substrate for device fabrication, which limits their scalability. [ 7,29 ] Very recently, high‐quality in‐plane NW networks have been successfully demonstrated with selective‐area [ 30,31 ] and template‐assisted [ 32 ] growth techniques, but the problems related to growth imperfections such as dislocation and polytypism still remain. In addition, the selective‐area growth works only for material systems that have good growth selectivity between oxides and semiconductors.…”

Section: Figurementioning

confidence: 99%

Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling

et al. 2020

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attention due to its high hole mobility, [10][11][12][13] low effective mass in 2D hole gases, [14,15] good contacts with metals, [16][17][18] strong spin-orbit interactions, [19][20][21][22] capability of isotopic purification, [23] and compatibility with Si. These attractive features make Ge a promising candidate not only as a transistor channel material but also as a host for spin [6,24,25] and even topological qubits. [26,27] Excitingly, the first hole spin qubit [6] and proximity-induced superconductivity with a hard gap [28] have been realized recently in 1D Ge.Despite much progress that has been made so far, it remains a formidable challenge to have individuals as well as arrays of NWs with a high degree of addressability and scalability for the next generation of NW-based quantum devices. For example, in the field of group III-V semiconductors, precisely positioned NW networks have been achieved with predefined metal islands. [29] The out-of-plane grown NW structures, however, need to be transferred from the growth wafer to a second substrate for device fabrication, which limits their scalability. [7,29] Very recently, high-quality inplane NW networks have been successfully demonstrated with Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain-relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.

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“…Even though the initial work was reported about 30 years ago, 27-30 only the recent promising results reported in Ref. [31][32][33][34][35] have renewed the interest in SAG by MBE.In this work, we present selective area growth of InAs NW networks by MBE, which are grown either on GaAs based buffer layers or directly on semi-insulating InP and GaAs substrates. We demonstrate growth of lithographically designed NW networks with well-defined junctions, where the faceting depends on the mask alignment to the crystal orientation of the substrate.…”

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confidence: 99%

Field effect enhancement in buffered quantum nanowire networks

Krizek

Sestoft

Aseev

et al. 2018

Phys. Rev. Materials

129

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III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.Material science plays a key role in quantum computing research. Long quantum state lifetimes -the fundamental prerequisite for realizing quantum computers -rely on the ability to produce materials with high purity and structural quality. Together with the requirements of scalability and reproducibility, these properties are what mainly defines the challenges of material science in quantum computing today. Proposals for topological quantum computing, 1-3 which are based on hybrid semiconductor-superconductor nanowire (NW) networks, are being pursued by numerous research groups and have ignited intense research efforts on hybrid epitaxy. 4-8 NW scalability is tightly related to the semiconductor growth approach. Top-down lithography has been used to define NWs in two-dimensional layers 5,9 and a variety of methods have been pursued for alignment and positioning of bottom-up vapor-liquid-solid (VLS) grown NWs, such as dielectrophoresis techniques, 10 nanoscale combing 11 and magnetic aligning of NWs. 12 Despite of these developments, large-scale synthesis of bottom-up grown high-mobility NW networks that are compatible with epitaxial interwire connections and semiconductor/superconductor epitaxy has still not been realized. To realize the epitaxial connections, a lot of effort has been put into the growth of branched NWs via the VLS method. 8,13-15 A scalable approach has been developed in Ref. [16,17] using template assisted growth of inplane NW networks. 18 Nonetheless, this approach is not yet compatible with superconductor epitaxy. An alternative scalable approach is to use lithographically defined openings in a mask on a crystalline substrate. This method is referred to as selective area growth (SAG) and until recently has mainly been used in conjunction with metal organic chemical vapour deposition 19,20 , metal organic vapour phase epitaxy 21,22 , chemical beam epitaxy and metal organic molecular beam epitaxy (chemical beam epitaxy). [23][24][25][26] In contrast to molecular beam epitaxy (MBE), the dissociation kinetics of the chemical precursors in these methods enhance the growth selectivity on masked substrates by expanding the growth parameter window, ...

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Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement

Cited by 31 publications

References 41 publications

Template-Assisted Scalable Nanowire Networks

Template-Assisted Scalable Nanowire Networks

Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling

Field effect enhancement in buffered quantum nanowire networks

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