Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy

Lekhal, Kaddour; Bae, Si‐Young; Lee, Hojun; Mitsunari, Tadashi; Tamura, Akira; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

doi:10.7567/jjap.55.05ff03

Cited by 11 publications

(8 citation statements)

References 29 publications

(29 reference statements)

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“…surfaces in a large chemical potential range (except for (112 ̅ 2) surfaces under extremely Ga-rich condition). Also, (101 ̅ 2) surface, which was also revealed in experiments [55,56], is the most stable one in the region near Ga-rich. While it can also be observed under N-rich condition in experiments.…”

Section: / 12supporting

confidence: 66%

Stability of wurtzite semipolar surfaces: Algorithms and practices

Zhang

Zhu

2018

Phys. Rev. Materials

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A complete knowledge of absolute surface energies with any arbitrary crystal orientation is important for the improvements of semiconductor devices because it determines the equilibrium and nonequilibrium crystal shapes of thin films and nanostructures. It is also crucial in the control of thin film crystal growth and surface effect studies in broad research fields. However, obtaining accurate absolute formation energies is still a huge challenge for the semi-polar surfaces of compound semiconductors. It mainly results from the asymmetry nature of crystal structures and the complicated step morphologies and related reconstructions of these surface configurations. Here we propose a general approach to calculate the absolute formation energies of wurtzite semi-polar surfaces by first-principles calculations, taking GaN as an example. We mainly focused on two commonly seen sets of semi-polar surfaces: a-family (112 ̅ X) and m-family (101 ̅ X). For all the semi-polar surfaces that we have calculated in this paper, the self-consistent accuracy is within 1.5 meV/Å 2 . Our work fills the last technical gap to fully investigate and understand the shape and morphology of compound semiconductors.

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Section: / 12supporting

confidence: 66%

Stability of wurtzite semipolar surfaces: Algorithms and practices

Zhang

Zhu

2018

Phys. Rev. Materials

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“…The NBE of the GaN NRs peaked at 3.49 eV, slightly higher than the typical peak of neutral donor-bound excitons (D 0 X), which appears at 3.47 eV. This slight increase might arise from compressive strain of the GaN NRs as well as Si impurities dissociated from the mask535455. The compressive strain of GaN NRs was confirmed by Raman spectroscopy (see Supplementary Fig.…”

Section: Resultsmentioning

confidence: 78%

III-nitride core–shell nanorod array on quartz substrates

Bae

Min

Hwang

et al. 2017

Sci Rep

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We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal–organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core–shell nanorods were then investigated. The nanorods were highly crystalline and the core–shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.

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“…In the HVPE process, the growth temperature, which is higher than 600 °C, is supposed to be high enough to overcome this limitation. Furthermore, previous studies demonstrated that the radial growth rate of GaN rods grown by HVPE decreases at a high partial pressure of HCl and/or H2 [26], [27] . These findings are in accordance with the theoretical results dealing with the effect of H2 on the growth rate of non-polar GaN (1-100) surfaces [36] .…”

Section: Resultsmentioning

confidence: 95%

“…Crystal shape engineering of nitride structures by SAG-HVPE can be carried out by varying the vapor-phase composition and the growth temperature. These experimental parameters govern the kinetics involved in the growth process. − Understanding how each parameter impacts the crystal growth of InN is important to monitor the formation of the nanorods. To the best of our knowledge, no study has ever been carried out to understand and ultimately control the SAG of InN nanorods.…”

Section: Introductionmentioning

confidence: 99%

Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Zeghouane

Avit

André

et al. 2020

Crystal Growth & Design

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The control of the morphology of InN nanorods, which remains challenging due to complex mechanisms involved in the growth process, is essential for the next generation of nano-and optoelectronic devices. In this paper, we report on the Selective Area Growth (SAG) of InN nanorods on Ga-polar GaN/c-Al2O3 template using Hydride Vapor Phase Epitaxy (HVPE). A systematic study of the evolution of the shape of InN nanorods under various growth conditions: growth temperature, growth time and the input NH3 partial pressure, is carried out. The optimal growth temperature to achieve a perfect selectivity and prevent InN decomposition is first determined. The axial and radial growth rates dependence on the growth temperature and vapor phase composition with group V elements is discussed. The influence of mass transport on the InN nanorods geometry is shown to be more pronounced at extended growth time. The swapping of the nanorods morphology from pencil to a perfect hexagonal shape is controlled by varying the growth time. Photoluminescence measurements on InN nanorods are interpreted by considering a concentration of free electrons. The results reported herein provide relevant information for understanding SAG of InN, and could pave the way to develop high performance InN nanorods based devices.

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Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy

Cited by 11 publications

References 29 publications

Stability of wurtzite semipolar surfaces: Algorithms and practices

Stability of wurtzite semipolar surfaces: Algorithms and practices

III-nitride core–shell nanorod array on quartz substrates

Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

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