Selective area epitaxy of InP/GaInAsP heterostructures by MOMBE

Heinecke, H.; Baur, B.; Schimpe, R.; Matz, R.; Cremer, C.; Höger, R.; Miklis, A.

doi:10.1016/0022-0248(92)90421-e

Cited by 36 publications

(11 citation statements)

References 13 publications

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“…In the 1990s, this approach was used on micrometer scale patterns, as for instance in the work of Heinecke et al which detailed the faceting of InP microcrystals depending on the opening orientation and the value of P/In using metalorganic vapor phase epitaxy (MOVPE) or metalorganic molecular beam epitaxy (MOMBE). They achieved vertical sidewalls on the grown structures for high P/In ratios using small substrate misorientation [1][2][3]. A recent work also reports on the influence on the base size and shape on the formation of InP pyramids by selective area MOVPE, stressing the interplay between the major low-index facets in the final shape [4].…”

Section: Introductionmentioning

confidence: 99%

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

Fahed

Desplanque²,

Coinon³

et al. 2015

Nanotechnology

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The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

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Section: Introductionmentioning

confidence: 99%

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

Fahed

Desplanque²,

Coinon³

et al. 2015

Nanotechnology

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show abstract

“…The SAG of GaAs [6,48,49], InP [44,[50][51][52][53][54], InGaAs [44,[51][52][53][54], and GaSb [55] has been demonstrated and studied. The SAG of GaAs [6,48,49], InP [44,[50][51][52][53][54], InGaAs [44,[51][52][53][54], and GaSb [55] has been demonstrated and studied.…”

Section: Mombementioning

confidence: 99%

“…The SAG of GaAs [6,48,49], InP [44,[50][51][52][53][54], InGaAs [44,[51][52][53][54], and GaSb [55] has been demonstrated and studied. Therefore, the edge features are small, By adjusting the growth conditions (elevated T sub ), flat-top surfaces were obtained [54,56]. The diffusive transport of source materials in the gas phase is excluded in MOMBE/CBE.…”

Section: Mombementioning

confidence: 99%

“…Depending on the growth conditions, inclined (111)B facets [56] but also vertical (01 1) planes [54] can be grown. Depending on the growth conditions, inclined (111)B facets [56] but also vertical (01 1) planes [54] can be grown.…”

Section: Mombementioning

confidence: 99%

“…Finally, it is noteworthy that the use of a slightly misoriented substrate and a high V/III ratio allows the selective growth of InGaAsP/InP planar structures with nearly perfectly vertical sidewalls [45,54]. In the SAG of InP with elemental In and gaseous PH 3 under high V/III conditions, Heinecke et al [54] demonstrated the formation of (01 1) vertical sidewalls on the (100) InP substrate that were slightly misoriented toward the [110] direction.…”

Section: Mombementioning

confidence: 99%

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