Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. 2004
DOI: 10.1109/commad.2004.1577543
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Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration

Sudha Mokkapati
1
,
P. Lever
2
,
Hark Hoe Tan
3
et al.

Abstract: We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs quantum-dots in different regions of the same wafer. We report single step, MOCVD growth of different sized dots, luminescing at wavelengths spread over a range of 100nm.

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