Selective-Area Epitaxy of Bulk-Insulating (BixSb1–x)2Te3 Films and Nanowires by Molecular Beam Epitaxy
Gertjan Lippertz,
Oliver Breunig,
Rafael Fister
et al.
Abstract:Selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a prepatterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the SAE technique. Their transport properties show that the quality of the selectively grown structures is comparable to th… Show more
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