Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures

Mahaboob, Isra; Marini, Jonathan; Hogan, Kasey; Rocco, Emma; Tompkins, Randy P.; Lazarus, Nathan

doi:10.1007/s11664-018-6576-z

Cited by 16 publications

(7 citation statements)

References 23 publications

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“…Prior works established the incorporation of unintentional dopants through the decomposition of the dielectric mask or due to the presence of residues from the dielectric mask at the regrowth interface. [31][32][33] For the incorporation of dopants from the dielectric mask, the collection volume for the outermost dots in the arrays is expected to lead to a larger incorporation of unintentional dopants, which contradicts our findings. The outermost dots have consistently resulted in the lowest carrier concentration.…”

Section: Journal Of Applied Physicscontrasting

confidence: 79%

Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates

Tanaka

Choi

Chen

et al. 2018

Journal of Applied Physics

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A major challenge in gallium nitride (GaN) vertical power devices and other large bandgap materials is the high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the heterointerface where there are both lattice and thermal mismatches. Here, we report the selective area growth (SAG) of thick GaN on Si and on the newly available Qromis Substrate Technology™ (QST) substrates that lead to a significant reduction of the defect densities to a level that is nearly comparable to that on native substrates by defect annihilation. We performed a parametric study of the electrical properties of the SAG GaN layers by fabricating and characterizing Schottky barrier diodes for SAG GaN layer thicknesses of 5, 10, 15, and 20 μm for GaN-on-Si, GaN-on-QST, and GaN-on-GaN diodes. While thicker layers led to a significant reduction in defect densities and improvement in the diode forward current characteristics, the GaN-on-QST diodes exhibited nearly similar characteristics to the GaN-on-GaN diodes. Further improvement in the device structure and/or SAG growth for GaN-on-Si is needed to achieve a comparable performance as the defect densities in the GaN-on-Si are comparable to that of GaN-on-QST substrates.

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Section: Journal Of Applied Physicscontrasting

confidence: 79%

Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates

Tanaka

Choi

Chen

et al. 2018

Journal of Applied Physics

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“…The gallium nitride (GaN)-based material system and its ternary and quaternary alloys with aluminum (Al) and indium (In) are widely employed in light emitting diodes (LEDs), photodetectors [1][2][3] , and the next generation of power devices [4][5][6][7] . Due to the lack of inversion symmetry within the III-Nitride wurtzite crystal structure the material exhibits a spontaneous polarization charge along the c-direction.…”

Section: We Report On the Enhanced Incorporation Efficiency Of Magnesmentioning

confidence: 99%

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

Rocco

Licata

Mahaboob

et al. 2020

Sci Rep

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We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template layers. Total magnesium concentration in planar regions surrounding a hillock structure is comparable to that within hillock sidewall facets measured at 1.3 × 1019 cm−3 by atom probe tomography, and clustering of Mg atoms is seen in all regions of the film. Within individual hillock structures a decreased Mg cluster density is observed within hillock structures as opposed to the planar regions surrounding a hillock. Additionally, the Mg cluster radius is decreased within the hillock sidewall. The favorable incorporation of Mg is attributed to Mg dopants incorporating substitutionally for Ga during growth of semi-polar facets of the hillock structures. Enhanced p-type conductivity of GaN:Mg films grown on high hillock density template layers is verified by optical and electrical measurement.

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“…In low-power biosensing applications, HEMTs have emerged as promising candidates due to their high surface sensitivity, fast response, chemical stability and biocompatibility [5], [6], [7]. Tremendous amount of research has been done over the last two decades to improve the quality of the epitaxially grown material [8], [9], [10], develop novel device structures [11], [12], [13] and processing techniques [14], [15]. Such advancements have resulted in rapid progress of this technology.…”

Section: Introductionmentioning

confidence: 99%

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

Mahaboob

Yakimov

Hogan

et al. 2019

IEEE J. Electron Devices Soc.

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We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode. In this configuration, p-GaN body-diode-based back-gate control is used to shift the threshold voltage and dynamically modulate the ON/OFF characteristics of a normally-ON AlGaN/GaN HEMT. A fourth back-gate terminal is connected to the p-GaN layer to control the depletion width of the body-diode, which in turn modulates the 2-D electron gas (2DEG) density. A positive/negative shift in the threshold voltage is measured by increasing/decreasing the depletion width below the channel. A positive back-gate bias application in the ON-state is shown to increase the 2DEG current density resulting in higher ON-current. The application of a negative back-gate bias is shown to be effective in the positive shift of the threshold voltage, in reducing the 2DEG channel current and in increasing the OFF-state break-down voltage. We have experimentally demonstrated enhanced effect of body-diode-based back-gate control in shifting the threshold voltage of a normally-ON HEMT toward normally-OFF mode. The optimum back-gate voltage range which can be applied during both ON and OFF states has been experimentally determined.INDEX TERMS AlGaN/GaN HEMT, dynamic body-biasing, body-diode, back-gate, threshold voltage shift.

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Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures

Cited by 16 publications

References 23 publications

Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates

Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

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