Selective Area Chemical Vapor Deposition of Si[sub 1−x]Ge[sub x] Thin Film Alloys by the Alternating Cyclic Method: A Thermodynamic Analysis. I. The System Si-Ge-Cl-H
Abstract:To investigate selective area chemical vapor deposition of Si 1Ϫx Ge x thin films by the alternating cyclic (A.C.) process, a thermodynamic analysis has been performed over extensive temperature, pressure, input gas ratio, and deposited solid composition ranges. In the A.C. approach Si 1Ϫx Ge x thin film deposition via the hydrogen reduction of SiCl 4 and GeCl 4 is followed cyclically by etching of spurious nuclei from mask regions via an embedded disproportionation reaction. The embedded disproportionation re… Show more
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