Selective Area Chemical Vapor Deposition of Aluminum Using Dimethylethylamine Alane

Simmonds, Michael G.; Taupin, Isabelle; Gladfelter, Wayne L.

doi:10.1021/cm00043a012

Cited by 36 publications

(32 citation statements)

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“…[4] Use of the cold wall reactor minimized gas-phase reactions, however, we also found it necessary to reduce the concentration of the Co(CO) 3 (NO) in the gas phase by cooling the precursor vessel. The equilibrium vapor pressure, measured between -13 and 17°C in a closed system with a capacitance manometer, obeyed the equation ln P = 23.3 -(5480/T), where P is in torr and T in kelvin.…”

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confidence: 89%

“…The specific combination of copper/cobalt in GMR structures, either in multilayer form [4,5] or as a granular alloy, [3,6] has attracted tremendous interest. [3][4][5][6][7] Most of the published studies on copper/cobalt GMR structures have employed physical growth techniques such as evaporation [7] or sputtering. [6] The present work, however, aims to use metal organic chemical vapor deposition (MOCVD) to deposit copper/cobalt multilayer GMR thin films.…”

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confidence: 99%

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Splitting the Coordinated Nitric Oxide in Co(CO)3(NO) Leads to a Nanocrystalline, Conductive Oxonitride of Cobalt

Crawford¹,

Knutsen²,

Yang³

et al. 1998

Chem. Vap. Deposition

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Thermolysis of metal carbonyls of the late transition elements has long been known to produce pure metals, a reaction used in metallurgical processing of nickel and the CVD of films of nickel, cobalt, iron, and some alloys. [1,2] Oxides can also be produced from metal carbonyls by conducting the pyrolyses in air. A recent example includes the formation of tetrahedral nanocrystals of CoO from Co 2 (CO) 8 .[3] We report in this paper that substitution of one nitrosyl ligand into the coordination sphere of the cobalt carbonyl completely alters the course of the reaction and the nature of the product. The new solid-state product, CoN x O 1-x , exhibits electrical conductivity many orders of magnitude greater than pure CoO. Due to the thermal sensitivity of the solid-state product, its synthesis is limited to a low-temperature reaction such as described here. Nanocrystalline particles having a coherence length of 14 nm were prepared by passing Co(CO) 3 (NO) (P Co(CO) 3 (NO) = 20 torr) into a vertically oriented hot-wall reactor heated to 350°C. The orange color of the gas mixture at the entrance of the reactor quickly dissipated and was replaced by an aerosol of ultrafine particles that was collected on a medium-porosity glass frit at the end of the reactor. In a typical experiment 1.50 g of Co(CO) 3 (NO) was converted into 0.25 g (40 % yield) of a black powder at a reactor temperature of 300°C over a period of 3-5 min. Deposition on the reactor wall and unreacted precursor (observed in the liquid-nitrogen-cooled trap) account for the moderate yield. If a carrier gas (Ar or N 2 ) was used, its mass flow rate ranged from 0 to 300 sccm, and the residence time within the reactor was of the order of tens of seconds. All references to temperature correspond to the maximum value at the center (in length) along the reactor. When this value was 300°C, the temperatures at the entrance and exits were 70 and 250°C, respectively.Thin films of the oxonitride were deposited using a stainless steel cold wall reactor described in detail elsewhere. [4] Use of the cold wall reactor minimized gas-phase reactions, however, we also found it necessary to reduce the concentration of the Co(CO) 3 (NO) in the gas phase by cooling the precursor vessel. The equilibrium vapor pressure, measured between -13 and 17°C in a closed system with a capacitance manometer, obeyed the equation ln P = 23.3 -(5480/T), where P is in torr and T in kelvin. The precursor was cooled to -23°C during most depositions, and the total pressure was maintained at 3 torr using an argon flow rate of 14 sccm. Smooth films exhibited the same composition and diffraction patterns as found in the nanoparticles isolated from the aerosol process.All reflections in the X-ray powder diffraction pattern ( Fig. 1) for particles prepared between 200 and 400°C were indexed to a cubic lattice with a = 4.415 Å, a value approximately 40 % between that of the metastable zinc blende phases of CoO (4.544 Å) [5,6] and CoN (4.28 Å). [7] The stable rock salt phase of CoO has a lattice constant...

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confidence: 99%

Splitting the Coordinated Nitric Oxide in Co(CO)3(NO) Leads to a Nanocrystalline, Conductive Oxonitride of Cobalt

Crawford¹,

Knutsen²,

Yang³

et al. 1998

Chem. Vap. Deposition

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“…Its relatively high vapor pressure at room temperature ͑1.5 Torr͒, its long shelf life, its ability to deposit carbon contamination-free films, combined with the advantages of being a liquid have recently made it the precursor of attention. The deposition behavior and chemistry of DMEAA, 2 have been studied including selective deposition 3,4 but study of the microstructure of Al films and data related to the deposition rate and chemical reaction kinetics is still lacking.…”

Section: Laboratory For Advanced Materials Processing (Lamp) Departmmentioning

confidence: 99%

Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane

Kim

Rhee

1996

Applied Physics Letters

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Deposition of aluminum film from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain the experimental observations.

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Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl Nitrosyl

Lane¹,

Oliver²,

Wright³

et al. 1998

Chem. Vap. Deposition

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Selective Area Chemical Vapor Deposition of Aluminum Using Dimethylethylamine Alane

Cited by 36 publications

References 1 publication

Splitting the Coordinated Nitric Oxide in Co(CO)3(NO) Leads to a Nanocrystalline, Conductive Oxonitride of Cobalt

Splitting the Coordinated Nitric Oxide in Co(CO)3(NO) Leads to a Nanocrystalline, Conductive Oxonitride of Cobalt

Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane

Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl Nitrosyl

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