Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

Pattern size effect on source supply process for sub-micrometer scale selective area growth by organometallic vapor phase epitaxy

“…This theoretical prediction agrees with the conclusions of other studies, which consider masks of size ranging from several micrometers to several hundred micrometers. In addition, other studies report that the growth rate increases linearly with mask width [11][12][13], as predicted by Eq. (18).…”

“…Some values included in Eq. (12) can also be estimated from this comparison. The intercept of the growth rate, v, at y 0 ¼ 0 is the growth rate towards the unmasked substrate, v n .…”

“…3 shows the difference between the growth rates as a function of the mask width of both processes by calculating Eqs. (12) and (17) with the typical parameters; v ¼ 0:04 nm 3 , w ¼ 200 nm, v n ¼ 300 nm=s, Dn c ¼ 10 15 cm À2 , D s ¼ 10 À8 cm 2 =s and l s ¼ 3 mm for the surface diffusion process, d ¼ 1 mm, C 1 ¼ 10 18 cm À3 , C c ¼ 0 and D g ¼ 3 Â 10 À6 cm 2 =s for the vapor phase diffusion process. The growth rate due to the surface diffusion process increases rapidly initially, but plateaus with increasing y 0 .…”

Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2

“…The transport of precursors during growth on planar 2D masks has been analyzed in detail [8,16,[21][22][23][24], however the use of three dimensional masks, i.e. confinement of growth in both in-plane and out-of-plane directions, has been the subject to fewer studies [5,9,14].…”

The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

“…This situation gives rise to an additional concentration gradient in the region adjacent to the mask and leads to the wellknown growth rate enhancement (GRE) near the mask edges. The dielectric mask can be patterned in ways to control the GRE to produce novel optoelectronic devices [1,2].…”