Selective and homo emitter junction formation using precise dopant concentration control by ion implantation and microwave, laser or furnace annealing techniques

Borland, John; Moroz, Victor; Huang, Ju; Chen, John; Lee, Yao-Jen; Oesterlin, Peter; Venema, P.; Geerman, H.; Zhao, Pan; Wang, Larry

doi:10.1109/pvsc.2012.6318018

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…It is known that there are high dopant peak concentrations at the surface layer in the cell prepared by POCl 3 diffusion. 12) In this layer with high peak concentrations, there was electrically inactive phosphorus. 18) The surface recombination was increased and solar cell parameters deteriorated owing to the electrically inactive dopants.…”

Section: Conventional Structure Solar Cellsmentioning

confidence: 99%

“…The junction depth of wafers formed with the ion shower doping technique was assumed to be approximately 500 nm. 12) We also fabricated selective emitter structure solar cells using the ion shower doping technique. First, we prepared a low-doping uniformity emitter layer by POCl 3 diffusion at 860 C for 20 min before we fabricated a selective highdoping emitter region.…”

Section: Solar Cell Fabricationmentioning

confidence: 99%

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Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells

Hashiguchi

Tachibana

Aoki

et al. 2013

Jpn. J. Appl. Phys.

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For realizing low-cost and high-conversion-efficiency silicon solar cells, we propose an ion shower doping technique for fabricating conventional and selective emitter structure solar cells. Because of its high through put with a large beam area, the technique could lead to low-cost production of the emitter layer. We used this technique to form a uniform emitter layer and also a selective high-doping emitter region for silicon solar cells, which were compared with cells prepared by POCl3 diffusion. The conventional structure cells were confirmed to have good electrical properties with uniform conversion efficiency compared with the cells prepared by POCl3 diffusion. There was no doping-induced damage nor metal impurities interfused during the ion shower doping. In addition, the conversion efficiency of selective emitter structure cells was higher than that of cell prepared by POCl3 diffusion only. We concluded that the ion shower doping technique is useful for forming a uniform emitter layer as well as a selective emitter region.

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Section: Conventional Structure Solar Cellsmentioning

confidence: 99%

Section: Solar Cell Fabricationmentioning

confidence: 99%

Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells

Hashiguchi

Tachibana

Aoki

et al. 2013

Jpn. J. Appl. Phys.

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show abstract

“…al. [36] in 2011 with implanted phosphorous and boron in silicon and under various annealing condition and techniques. Simulated results of this study showed greater than 20% efficiency is achievable using peak doping concentration of ~110 19 cm -3 and with junction depth of 400 -900 nm (Fig.…”

Section: P-n Junction Formationmentioning

confidence: 99%

Prospects of Microwave Heating in Silicon Solar Cell Fabrication – A Review

Das¹

2013

IOSR-JEEE

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Solar energy is only renewable energy source that does not depend on earth's resources. Current industrial manufacturing of solar cells use manufacturing steps that have many sustainable issues. So it becomes very important to promote technologies that are more sustainable than current state of the art. This paper will look into prospects of microwave heating for silicon solar cell fabrication in this perspective. Microwave heating is very different from conventional heating techniques and application of microwave for semiconductor processing purposes has many advantages. It provides avenue to crystallisation of amorphous solids, reduction of defects, selective heating, reduction in processing time, sintering of powdered materials and so on. Sustainability analysis of microwave heating over conventional heating will be presented to judge its suitability in solar cell fabrication. Status of different technologies using microwave heating which could replace or assist in different fabrication steps of solar cells will be reviewed. Based on these reviews, possible fabrication schemes of silicon solar cells will be presented.

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Implant dopant activation comparison between silicon and germanium

Borland¹,

Konkola²

2014

2014 20th International Conference on Ion Implantation Technology (IIT)

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Selective and homo emitter junction formation using precise dopant concentration control by ion implantation and microwave, laser or furnace annealing techniques

Cited by 3 publications

References 8 publications

Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells

Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells

Prospects of Microwave Heating in Silicon Solar Cell Fabrication – A Review

Implant dopant activation comparison between silicon and germanium

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