2014
DOI: 10.1134/s1063739714020073
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Selection of optimal parameters of laser radiation for simulating ionization effects in silicon bulk-technology microcircuits

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Cited by 16 publications
(6 citation statements)
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“…The purposes of assessing the radiation resistance may be certification of designing and technological platform of GA (the process and means of IC design based on it) for forecasting (guaranteeing) of the typical (expected) and maximum levels of resistance of finished products and for the qualification of IC on GA (lining) to ensure the specified levels of radiation resistance or the assessment of their stability. [1][2][3][4] возникновение радиационно-индуцированных токовых утечек по цепи питания вследствие накопления зарядов в "толстом" изолирующем окисле, сдвиги пороговых напряжений МОП-транзисторов (этот эффект менее значим для современных микрос хем), де г ра д а ц и я к ру т изны (под ви ж нос т и) и подпорогового размаха передаточной характеристики. При этом с уменьшением проектных норм доминиру ющ им ме ха низмом дег ра дации КМОП-элементов становятся радиа ционноиндуцированные токи утечки.…”
Section: Common Methodology For Evaluation Of Radiation Resistance Ofunclassified
See 1 more Smart Citation
“…The purposes of assessing the radiation resistance may be certification of designing and technological platform of GA (the process and means of IC design based on it) for forecasting (guaranteeing) of the typical (expected) and maximum levels of resistance of finished products and for the qualification of IC on GA (lining) to ensure the specified levels of radiation resistance or the assessment of their stability. [1][2][3][4] возникновение радиационно-индуцированных токовых утечек по цепи питания вследствие накопления зарядов в "толстом" изолирующем окисле, сдвиги пороговых напряжений МОП-транзисторов (этот эффект менее значим для современных микрос хем), де г ра д а ц и я к ру т изны (под ви ж нос т и) и подпорогового размаха передаточной характеристики. При этом с уменьшением проектных норм доминиру ющ им ме ха низмом дег ра дации КМОП-элементов становятся радиа ционноиндуцированные токи утечки.…”
Section: Common Methodology For Evaluation Of Radiation Resistance Ofunclassified
“…• local ionization effects at influence of ind ividua l nuclear particles. I n ICs implemented u sing nanoscale CMOS processes, in case of dose ionizing radiation [1][2][3][4] the appearance of radiation-induced current leakages in the power supply circuit due to the accumulation of charges in thick insulating oxide, the shifts of threshold voltages of the MOSFETs (this effect is less significant for modern chips), the degradation of slope (mobility) and subthreshold swing of the transfer characteristic are observed. Thus, with the decreasing design rule a dominant mechanism of degradation of the CMOS elements are radiation-induced leakage currents.…”
Section: Dominant Radiation Effects In Ga and Semicustom Ic On Their mentioning
confidence: 99%
“…For the realization of the automatic control system with computer modelling LabVIEW graphical programming medium and сRIO controller from National Instruments have been chosen [6]. The advantage of using the LabVIEW graphical programming language in modelling is in the presence of functions (virtual appliances and gadgets), allowing and helping to solve differential equations in the period of time close to real time, by applying Runge Kutta method: Second order, as well as Laplace method.…”
Section: System Of Controlmentioning
confidence: 99%
“…nOMIII MO TpaAIII l.\III OHHbIX noneBblX TpaH3111 cToPOB C 3a TBOPOM WOTTKIII Ha GaAs Bce 60nee wlll poKoe nplII Me HeHlll e HaXOAs:!T 3neMeHTbi Ha OCHOBe HaHoreTepocTpYK Typ A3B5, TaKlll e KaK noneBble TpaH3111 cToPbl C BbICOKO� nOABIII >KHOCTblO HoclII Tene� B KaHane (HEMT TpaH3111 -CTOPbl), reTepOCTpYKTypHble 6l11 nons:!pHble TpaH3I11 CTOPbl, pe30HaHCHO-TYHHenbHbie AIII OAbl. B pa60Tax [2,3] P3KB(X, t) = K3rjX/J a[ln(t)/(hv"9o)]exp(-ax), (2) rAe x -KOOPAItlHaTa no rny6ltlHe; t -BpeMs:I; In(t) ItlHTeHCItlBHOCTb JlIt1; hv -3Heprltls:l KBaHTOB JlIt1; K3cjJcjJ = KM(1 -R) -K03cpcpltll..\ItleHT 3cpcpeKTItlBHOCTItl JlIt1; KM = 818M -K03cpcpltll..\ItleHT nOKpblTltls:l MeTannltl3al..\ltle� o6nY4aeMo� nOBepXHOCTItl; R -K03cpcpltll..\ItleHT oTpa >KeHltls:l OT rpaHltll..\bl pa3Aena.…”
Section: Bbeaehmementioning
confidence: 99%