Selection of Materials for Use at Temperatures above 1500°C in Oxidizing Atmospheres

Bundschuh, K.; Schüze, M; Müller, Christoph Michael; Greil, Peter; Heider, W.

doi:10.1016/s0955-2219(98)00247-7

Cited by 30 publications

(14 citation statements)

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“…Significant research in the growth and characterization of both Gd 2 O 3 and Y 2 O 3 has been undertaken over the past few years because of their several relevant physical properties and technical applications such as: high melting point [1]; high mechanical strength [2]; high dielectric constant (in the range [14][15][16][17][18] [3]; a rather high refractive index n ≅ 2 [4]; and a very good protective behavior as a coating in reactive severe environment [5]. Both are promising materials for electronic applications to replace SiO 2 in metal-oxide-semiconductor (MOS) heterostructures used in the MOS transistor [6].…”

Section: Introductionmentioning

confidence: 99%

X‐ray diffraction analysis of powder and thin film of (Gd_1‐xY_x)₂O₃ prepared by sol‐gel process

Arda

2008

Cryst. Res. Technol.

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The mixed oxide (Gd 1-x Y x ) 2 O 3 (0.0 ≤ x ≤ 1.0) were synthesized, as powder and thin film, by a sol-gel process. X-ray diffraction data were collected and crystal structure and microstructure analysis were performed using Rietveld refinement method. All samples were found to have the same crystal system and formed solid solutions over the whole range of x. The cationic distribution, Gd 3+ and Y 3+, over the two non-equivalent sites 8b and 24d of the space group Ia3 is found to be random for all values of (x). The lattice parameter is found to vary linearly with the composition (x). Replacing Gd 3+ and Y 3+ by each other introduces a systemic decrease in the x-coordinate of cation position (24d) and slight changes in the oxygen coordinates. Crystallite size and microstrain analysis is performed along different crystallographic directions and anisotropic changes are found with the composition parameter (x). The average crystallite size ranges from 75 to 149 nm and the r.m.s strain from 0.027 to 0.068 x10 . Textured Gd 1.841 Y 0.159 O 3 (400) buffer layers, with a high degree of alignment in both out-plane and in-plan, are successfully grown on cube textured Ni (001) tape substrates by sol-gel dip coating process. The resulting buffer layers are crack-free, pinhole-free, dense and smooth. YbBa 2 Cu 3 O 7-x (YbBCO) thin film could be (00l) epitaxially grown on the obtained buffer layer using sol-gel dipping technique.

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Section: Introductionmentioning

confidence: 99%

X‐ray diffraction analysis of powder and thin film of (Gd_1‐xY_x)₂O₃ prepared by sol‐gel process

Arda

2008

Cryst. Res. Technol.

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“…As can be seen from these results, the samples were all well sintered with a relatively low porosity of less than 6.5%. Previous studies have demonstrated that the densification of Si 3 N 4 –MoSi 2 composites is still a challenge without sintering additives [20,21,22,23]. It was found that with the addition of Y and La, the densification could be significantly improved [24,25].…”

Section: Resultsmentioning

confidence: 99%

Microstructure and Properties of Thermal Electrode Material Si3N4–MoSi2 Composite Ceramics

Guan

et al. 2018

Materials

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With good high temperature and corrosive resistance performance, ceramic based composites can be used as promising materials to replace metal thermocouple materials. In this study, Si3N4–MoSi2 composites were prepared via hot pressing technology. X-ray diffraction (XRD), optical microscopy (OM), and scanning electron microscopy (SEM) were used to analyze the microstructure of the composites. The mechanical properties and electrical conductivity were tested. The results showed that the composites were composed of β-Si3N4, MoSi2, a small amount of Mo5Si3, and an amorphous glassy phase. The MoSi2 phase was evenly distributed in the matrix. The percolation network was formed with increasing MoSi2 content. The strength of the composites reached its maximum value when the MoSi2 content reached a critical point. The electrical conductivity behaved like a typical percolation phenomenon. The percolation threshold was about 30% to 45%.

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“…The observed oxidation behaviour is in accordance to the results of Lee at al. 29),31) and Bundschuh et al 32) The composites obtained of both routes show at 1300°C precipitations that cause cracks in the oxide layer, see Fig. 5.…”

Section: Ageing At Elevated Temperatures and Electrical Resistivitymentioning

confidence: 89%

Precursor derived SiOC/MoSi<sub>2</sub>-composites for diesel glow plugs: preparation and high temperature properties

Reitz

Schell

Bucharsky

et al. 2016

J. Ceram. Soc. Japan

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In this study precursor derived SiOC/MoSi 2 composites were evaluated with respect to their potential for the application as glow plug material. In a first step, fully dense composite materials with different fractions of electrical conductive MoSi 2 were fabricated by field-assisted sintering technique (FAST). The percolation threshold, where the electrical properties change from insulating to a suitable level of conduction depends on the microstructure, which can be controlled by the initial particle size of the used SiOC particles. It becomes principally possible to fabricate both, the insulating part and the heater material with the same MoSi 2 content and therefore without thermal mismatch. Room temperature properties, high temperature strength, oxidation and creep behaviour depend strongly on the MoSi 2 volume fraction. MoSi 2 contents beyond the percolation threshold lead to significantly enhanced creep rates. At high temperatures, reactions between SiOC and MoSi 2 can be observed, which differ at the air exposed surface and in the interior of the samples. From these findings, an upper limit for the application temperature can be derived.

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Selection of Materials for Use at Temperatures above 1500°C in Oxidizing Atmospheres

Cited by 30 publications

References 1 publication

X‐ray diffraction analysis of powder and thin film of (Gd_1‐xY_x)₂O₃ prepared by sol‐gel process

X‐ray diffraction analysis of powder and thin film of (Gd_1‐xY_x)₂O₃ prepared by sol‐gel process

Microstructure and Properties of Thermal Electrode Material Si3N4–MoSi2 Composite Ceramics

Precursor derived SiOC/MoSi<sub>2</sub>-composites for diesel glow plugs: preparation and high temperature properties

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Selection of Materials for Use at Temperatures above 1500°C in Oxidizing Atmospheres

Cited by 30 publications

References 1 publication

X‐ray diffraction analysis of powder and thin film of (Gd1‐xYx)2O3 prepared by sol‐gel process

X‐ray diffraction analysis of powder and thin film of (Gd1‐xYx)2O3 prepared by sol‐gel process

Microstructure and Properties of Thermal Electrode Material Si3N4–MoSi2 Composite Ceramics

Precursor derived SiOC/MoSi<sub>2</sub>-composites for diesel glow plugs: preparation and high temperature properties

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Product

Resources

About

X‐ray diffraction analysis of powder and thin film of (Gd_1‐xY_x)₂O₃ prepared by sol‐gel process

X‐ray diffraction analysis of powder and thin film of (Gd_1‐xY_x)₂O₃ prepared by sol‐gel process