Selection of an IGCT for multilevel converters dedicated to high‐voltage direct current grid connection of offshore wind‐farms

Abstract

Grid connection of remote offshore wind-parks uses high-voltage direct current technology and in order to reduce costs and losses and maximise profitability, semiconductor power losses must be minimised. To properly choose the semiconductors, it is necessary to estimate their losses for a large number of operating conditions. This article deals with a modelling approach to calculate power losses for many such operating conditions, based on measured semiconductor characteristics and the chosen multilevel modulation strategy. The case of the integrated gate-commutated thyristor is considered because, for a given device rating, it is possible to select an integrated gate-commutated thyristor benefiting from the best trade-off between on-state losses and turn-off losses, thus minimising the power losses of the two end-stations.