Segregation Behavior of Copper and Tantalum in Oxide Film and Si Substrate after Device Heat-treatment

Lee, In-Ji; Baek, Seung-Wook; Lee, Gon-Sub; Paik, Ungyu; Park, Jea‐Gun

doi:10.1149/ma2012-02/32/2657

Meet. Abstr.

2012

DOI: 10.1149/ma2012-02/32/2657

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Segregation Behavior of Copper and Tantalum in Oxide Film and Si Substrate after Device Heat-treatment

In-Ji Lee¹,

Seung-Wook Baek²,

Gon-Sub Lee³

et al.

Abstract: not Available.

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Segregation Behavior of Copper and Tantalum in Oxide Film and Si Substrate after Device Heat-treatment

Abstract: not Available.

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See others like this or search for similar articles

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