Seeman–Bohlin X-ray diffractometer for thin films

Feder, R.; Berry, B. S.

doi:10.1107/s0021889870006441

Cited by 126 publications

(20 citation statements)

References 3 publications

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“…X-ray analysis using a Huber thinfilm diffractometer in the Seemann-Bohlin geometry (4) provided information about structural changes during the reaction between tungsten and silicon. For both heavily doped polysi]icon and lightly doped, single-crystal silicon samples, only silicon, tungsten, and tetragonal WSi~ were Vol.…”

Section: Resultsmentioning

confidence: 99%

Interaction Between CVD Tungsten Films and Silicon during Annealing

Kamins

Laderman

Coulman

et al. 1986

J. Electrochem. Soc.

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The interaction of CVD tungsten films with lightly doped single-crystal silicon and heavily phosphorus-doped polysilicon has been examined. The reaction between tungsten and silicon forms only tetragonal tungsten disilicide in both cases. However, the reaction with lightly doped single-crystal silicon starts at 675~ while appreciable reaction with n * polysilicon requires temperatures above 725~ The increases in sheet resistance and surface roughness correlate with formation of tetragonal WSi2. As the annealing temperature increases, the sheet resistance and surface roughness initially increase as the tungsten is converted to silicide; at higher annealing temperatures the sheet resistance decreases significantly; Phosphorus initially in the polysilicon consumed during the silicide-forming reaction is lost from the system, but the volume concentration in the polysilicon remaining under the silicide does not appear to change greatly after annealing at 900~As integrated circuits become larger and more complex, interconnections between devices can limit circuit performance. The increased current density in interconnections with smaller cross sections increases the severity of electromigration in aluminum interconnections and restricts the use of aluminum. Although the resistivity of tungsten is somewhat higher than that of aluminum, tungsten films are being used for integrated-circuit metallization in increasing numbers of applications.Tungsten films are often advantageously formed by chemical vapor deposition. In some cases, tungsten is deposited over the entire wafer surface and patterned by lithography and etching. In other cases, selective deposition allows the tungsten deposit to be limited to the desired areas by exposing silicon or other active surfaces only in selected regions of the wafer (1-3). Selective deposition can be especially useful for preferentially depositing tungsten in contact holes to serve as a diffusion barrier when a more complex metallization system is used. It can also be used to deposit metal selectively over the source, gate, and drain regions of MOS transistors before intermediate-level insulator deposition.In many applications, selective CVD tungsten will be deposited directly on silicon. In some cases, reaction between the tungsten and silicon during subsequent processing must be avoided, while silicide formation may be desired in other applications. The first portion of the tungsten film is formed by the reaction of WF6 with the underlying silicon to produce a tungsten layer by the reaction 2WF~ + 3St ~ 2W + 3SiF4[1]No tungsten silicide forms at the low deposition temperature of about 300~ However, because of the active participation of the silicon surface during the initial stages of CVD tungsten deposition, a more intimate contact is expected with CVD tungsten than with evaporated or sputtered tungsten. This different interface may modify the temperature at which the tungsten reacts with silicon to form a silicide and may change the structure of the silicide.To investigate the temp...

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Section: Resultsmentioning

confidence: 99%

Interaction Between CVD Tungsten Films and Silicon during Annealing

Kamins

Laderman

Coulman

et al. 1986

J. Electrochem. Soc.

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“…In the thin film study [7] a fast room-temperature growth of CU(,Sn5 without the simultaneous growth of CujSn was reported. When Cu^Sn; consumes all the Sn, it continues to react with the remaining Figure 8 Schematic diagram of a cross-sectional view of white immersion tin (a) and gray immersion tin (b) based on the combined results of X-ray diffraction, bacliscattering, and Auger spectroscopies.…”

Section: Figures 7(a) Andmentioning

confidence: 97%

“…• White and gray immersion tin Structural and elemental information about white and gray immersion tin was obtained by a combination of glancingincidence X-ray diffraction [7], Rutherford backscattering spectroscopy [8], and Auger electron spectroscopy [9]. The first two techniques possess a depth resolution of 20 nm and can provide information on phase identification (by diffraction) and an in-depth compositional profile (by 729 lines indicate what would happen to the spectrum if Sn and Cu intermixed to form a layer between them with a graded composition.…”

Section: Metallurgical Analysis Of Immersion Tinmentioning

confidence: 99%

Immersion tin: Its chemistry, metallurgy, and application in electronic packaging technology

Kovac

1984

IBM J. Res. & Dev.

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“…These are shown schematically in Figure 19.2 , together with the standard θ − 2 θ geometry. It is worth mentioning in passing the asymmetric parafocusing Seeman -Bohlin geometry [7] , which was originally developed as a surface -sensitive diffraction technique but is now not generally employed. This technique maintains a parafocusing geometry at low angles of incidence by moving the detector around a focusing circle defi ned by the X -ray source and the sample surface, the latter being at a tangent to the focusing circle.…”

Section: Glancing Angle X -Ray Diffractionmentioning

confidence: 99%

Grazing Incidence X‐Ray Methods for Near‐Surface Structural Studies

Gibson

2011

Surface and Thin Film Analysis

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PrinciplesX -ray diffraction ( XRD ) represents the classical method for determining the crystalline structure of solid materials. The basic principle of XRD -Bragg ' s law -was expounded early during the twentieth century, and subsequently supplemented by theories regarding the detailed interpretation of XRD patterns. Over the past several decades, the instrumentation of XRD has evolved continuously, with more powerful and collimated X -ray beams and different diffraction geometries opening up possibilities for structural analysis in many different applications. Today, sophisticated software packages facilitate studies into determining the structure of very complex crystallographic systems. As research into surface modifi cation has led to increasing numbers of applications in industry -especially of thin fi lms -" grazing incidence, " or " glancing angle " geometries have been developed in order to render XRD more surface -sensitive. Currently, many XRD equipment manufacturers offer systems, or system attachments for " glancing angle " or " grazing incidence " XRD (GAXRD, GIXRD, GIXD, or GXRD). The aim of this chapter is to provide a broad outline of the two major grazing incidence XRD geometries, and to identify the differences between these and the standard θ − 2 θ diffraction method. The technique of grazing incidence X -ray refl ectivity ( GXRR , GIXR, GXR, or XRR) is also described, as the related theory is of central relevance here and is often applied on the same systems used for GAXRD. In order to complete the picture concerning grazing incidence X -ray structural analysis, a particular variant of X -ray absorption spectroscopy is briefl y mentioned. However, this technique can only be effectively applied at synchrotron radiation sources, and a full description of the method and the enormous range of applications would require a lengthy article in itself. In this chapter GXRR and one of the two principal glancing angle diffraction techniques are described in more detail, as these are normally applied on laboratory X -ray systems. Since theoretical aspects are not

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Seeman–Bohlin X-ray diffractometer for thin films

Cited by 126 publications

References 3 publications

Interaction Between CVD Tungsten Films and Silicon during Annealing

Interaction Between CVD Tungsten Films and Silicon during Annealing

Immersion tin: Its chemistry, metallurgy, and application in electronic packaging technology

Grazing Incidence X‐Ray Methods for Near‐Surface Structural Studies

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