Seed-mediated growth of gradient Cu–In–Zn–S alloyed nanocrystals by balancing cation exchange and shelling reaction

Wang, Lijin; Guan, Zhongyuan; Liu, Zhenyang; Lin, Ouyang; Cui, Wenrong; Yin, Zhe; Tang, Aiwei

doi:10.1016/j.jlumin.2022.119656

Cited by 5 publications

(3 citation statements)

References 29 publications

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“…2c shows the transient fluorescence spectra of the products, and the resulting time-resolved photoluminescence (TR-PL) decay curves can be fitted with a three-exponential function. The average lifetime ( τ avg ) of these samples can be calculated using the formula: 32 where the A 1 , A 2 , and A 3 represent the amplitude of the decay components at t = 0. The lifetimes of the three fitted components are designated as τ 1 , τ 2 , and τ 3 .…”

Section: Resultsmentioning

confidence: 99%

Rationally designed synthesis of bright Cu–Ga–Zn–Se-based nanocrystals for efficient green quantum-dot light-emitting diodes

Sun,

Zhao,

Lin

et al. 2024

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 99%

Rationally designed synthesis of bright Cu–Ga–Zn–Se-based nanocrystals for efficient green quantum-dot light-emitting diodes

Sun,

Zhao,

Lin

et al. 2024

J. Mater. Chem. C

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“…The energy levels of the materials used in this work are shown in Figure 1b. [30][31][32][33] The optical and structural characteristics of CIZS QDs are measured and the results are shown in Figure S1 (Supporting Information). These CIZS QDs exhibit representative PL and absorption profiles as reported previously.…”

Section: Resultsmentioning

confidence: 99%

“…The CIZS seed nanocrystals were prepared according to the previous method. [33] In a three-necked flask, the CIZS seed nanocrystals (40 mg mL −1 , 5 mL) were dispersed in a mixed solvent consisting of 10 mL of ODE and 1 mL of OA. Then, the mixed solution was stirred at 80 °C for 30 min and then backfilled with a nitrogen flow for another 30 min.…”

Section: Methodsmentioning

confidence: 99%

Multinary Cu─In─Zn─S‐based Quantum‐Dot Electroluminescence and Implications on Device Designs

Zheng,

Wang,

Bai

et al. 2023

Laser & Photonics Reviews

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Currently, the performance of quantum‐dot light‐emitting diodes (QLEDs) based on environmental‐friendly Cu─In─Zn─S quantum dots (QDs) still lags far behind that of Cd‐QDs‐based devices. Here it is demonstrated that the unique trap‐related recombination in Cu─In─Zn─S QDs is mainly responsible for the low device efficiency. The luminous efficiency of Cu─In─Zn─S‐based QLEDs is rather sensitive to the temperature and hole‐transporting layers (HTLs) due to the susceptible thermal‐related trappingdetrapping processes of holes in radiative Cu‐related traps. The holes in Cu‐related traps can be quenched by escaping to the valence band of the QDs or/and transferring to the adjacent HTLs. An HTL with low highest occupied molecular orbitals is desired to enhance the hole injection and hinder the aforementioned hole transfer. As a result, a high device efficiency of 6.0 cd A−1 is achieved at room temperature, which is attributed to suppressed HTL‐induced emission quenching and efficient valence‐band‐dominated hole injection from HTL to the QDs. The device efficiency is further increased to 13.2 cd A−1 at 150K by suppressing thermal‐induced quenching.

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Realization of Narrow‐Bandwidth Cu‐Ga‐S‐Based Quantum Dots with Controllable Luminescence

Niu,

Xie,

Chen

et al. 2024

Advanced Optical Materials

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Recently, I‐III‐VI type quantum dots (QDs) have attracted considerable attention in display technology due to their large‐scale tunable emission and environmentally friendly characteristics. However, within this family, narrow‐bandwidth Cu‐based QDs have rarely been reported. Herein, the synthesis of narrow‐bandwidth blue‐emitting Cu‐Ga‐S (CGS)‐based QDs is reported by a hot‐injection method for the first time, boasting a narrow full width at half‐maximum (FWHM) of 29 nm, closely approaching that of traditional Cd‐based QDs. Through precisely controlling the temperature of nucleation stage, CGS‐based QDs showcase a representative blue emission at 475 nm, featuring the narrowest FWHM and a photoluminescence quantum yield (PLQY) of 32%. Besides, the femtosecond transient fluorescence (fs‐TA) characterization indicates that the narrow‐bandwidth luminescence is attributed to band‐to‐hole recombination rather than donor‐acceptor pair (DAP) recombination. The work opens a new avenue for narrow‐bandwidth I‐III‐VI QDs, offering increased potential for applications in blue‐light‐emitting devices.

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Seed-mediated growth of gradient Cu–In–Zn–S alloyed nanocrystals by balancing cation exchange and shelling reaction

Cited by 5 publications

References 29 publications

Rationally designed synthesis of bright Cu–Ga–Zn–Se-based nanocrystals for efficient green quantum-dot light-emitting diodes

Rationally designed synthesis of bright Cu–Ga–Zn–Se-based nanocrystals for efficient green quantum-dot light-emitting diodes

Multinary Cu─In─Zn─S‐based Quantum‐Dot Electroluminescence and Implications on Device Designs

Realization of Narrow‐Bandwidth Cu‐Ga‐S‐Based Quantum Dots with Controllable Luminescence

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