2021
DOI: 10.1016/j.microrel.2021.114214
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SEE evaluation of ARM M0 cores in a 28 nm FDSOI technology

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“…An erroneous change of the state held in a storage cell caused by a particle strike is called Single event upset (SEU), which is the key contributor to the overall system soft error rate in modern VLSI circuits [4]. The SEU robustness of flip-flops is essential to ensure the overall reliability since flip-flop is one of the major elements in many digital designs [5,6]. Radiation Hardening by Design (RHBD) is an important technique to mitigate SEU in flip-flops as it works in commercial CMOS technology with no violation of design rules.…”
Section: Introductionmentioning
confidence: 99%
“…An erroneous change of the state held in a storage cell caused by a particle strike is called Single event upset (SEU), which is the key contributor to the overall system soft error rate in modern VLSI circuits [4]. The SEU robustness of flip-flops is essential to ensure the overall reliability since flip-flop is one of the major elements in many digital designs [5,6]. Radiation Hardening by Design (RHBD) is an important technique to mitigate SEU in flip-flops as it works in commercial CMOS technology with no violation of design rules.…”
Section: Introductionmentioning
confidence: 99%