Secondary Recrystallization in Vacuum Annealed Silicon Iron

Abstract

Articles you may be interested inEffect of composition and original orientation on secondary recrystallization of 3% siliconiron single crystals In 3% SiFe with high magnetocrystalline anisotropy, it is desirable to produce grain oriented material by secondary recrystallization. The size of the surface energy is an important reason for the selection of growing crystals during secondary grain growth. By studying the special crystal growth, it is essential to create well defined conditions on the surface of the sample. The surface is least disturbed if the sample is heated directly by an electric current. In such experiments, we found crystals growing either with a (110) or with a (100) orientation. The selection is influenced by the annealing temperature, by the conditions of evaporation, and by the surroundings of the sample. The growth of (110) plane grains rather than (100) grains can be understood from consideration of the surface energy.

The Divergent beam (Kossel) x-ray method and its uses in measuring strain contours in an individual grain of Fe-3 weight percent Si transformer sheet

“…For undisturbed surface conditions, the close packed (110) crystal plane is then preferred [14]. This hypothesis fits the observation that the Goss orienta tion grows more favorably in thin sheets since there the boundary is under greater surface tension and hence will migrate more rapidly [13]. The end result is a coarse-grained Goss oriented texture containing 85 to nearly 100 percent of (110) [001] grains.…”

“…At 1200 °C, the (110) crystals grow rapidly so that the secondary recrystallization is completed quickly. The 1200 °C anneal favors the Goss orientation; lower annealing temperatures favor the (100) [001] texture [13]. Furthermore, the Goss orientation grows more rapidly and more easily in thin, ^0.3 mm, (12 mil) Fe-3 Si sheets than in thicker sheets.…”

“…In terms of the definitions above £/, V, W cos (90 -0)= sin 0 = = &=- (13) (14) (15) and Since sin0= A/2d, we get (16) In principle, we could obtain the d values for all conies on the film by measuring the X-Y coordinates of only three points on each conic. In practice, we measure several points on each conic and use regressive analysis [39].…”