Secondary ion mass spectrometry

Heinrich, Kurt F. J.; Newbury, Dale E.; Analysis, Ion Microprobe Mass

doi:10.6028/nbs.sp.427

Cited by 20 publications

(8 citation statements)

References 11 publications

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“…At concentrations greater than approximately 1%, impurity concentration can usually be determined via X-ray fluorescence spectroscopy (XRF), X-ray photoelectron spectroscopy (XPS), energy dispersive spectroscopy (EDS), or Rutherford backscattering spectroscopy (RBS), among other methods. Some highly sensitive techniques, such as secondary-ion mass spectrometry (SIMS), can detect impurities down to parts per million or even parts per billion, , but their quantification requires reference samples. X-ray absorption spectroscopy (XAS) can be useful to determine the location and coordination of defects, that is, whether they are vacancies V A , interstitials A i , substitutions B A , antisites ( X A ), or complexes, but also requires standards and detailed modeling.…”

Section: Materials Properties and Research Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Materials Properties and Research Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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“…In fact, it has been demonstrated that the ionization probability of sputtered clusters may significantly depend on the cluster size. 3 In order to arrive at quantitative conclusions regarding the contribution of clusters to the total sputtered flux, it is therefore mandatory to complement the secondary-ion data by investigating those species which leave the surface in a neutral-charge state. In order to render them accessible to mass spectral analysis, these particles have to be post-ionized subsequent to their emission from the surface.…”

Section: Introductionmentioning

confidence: 99%

Generation of large indium clusters by sputtering

Staudt¹,

Wucher²

2002

Phys. Rev. B

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We have investigated the yields of neutral and charged In n clusters sputtered from a pure indium surface under bombardment with 15-keV Xe ϩ ions. It is shown that large neutral clusters containing up to 200 atoms can be detected. If the measured signals are corrected for size-dependent detection efficiency, an inverse power-law yield distribution according to n Ϫ␦ is found which exhibits two decay exponents of Ϫ3.9 for small (nр20) and Ϫ2.1 for large (20рnр100) clusters. This finding closes the gap between published mass spectrometric and electron microscopy data on the size distributions of sputtered clusters. It also indicates that the generation of large clusters in sputtering is governed by hydrodynamical or even thermodynamical mechanisms rather than the fast collisional processes leading to the emission of small clusters.

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“…The SIMS technique has been thoroughly discussed in the literature (Evans 1972, Benninghoven 1973, Heinrich 1975, Werner 1976. Basically the SIMS method involves the bombardment of the surface under investigation with a probe beam of energetic ions of usually several keV.…”

Section: Methodsmentioning

confidence: 99%

SIMS Analysis in a conventional scanning electron microscope

Haeussler¹

1980

Scanning

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Secondary ion mass spectrometry

Cited by 20 publications

References 11 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

Generation of large indium clusters by sputtering

SIMS Analysis in a conventional scanning electron microscope

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