Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

Abstract

The formulas for parameters of negative electron affinity semiconductor NEAS with large λ NEASLD are deduced, respectively, λ is the mean escape depth of secondary electrons; And the methods of obtaining parameters such as λ, B, E pom, maximum δ and δ at 100.0 keV≥E po≥1.0 keV of NEASLD with the deduced formulas are presented, respectively, where B is the probability that an internal secondary electron escapes into vacuum upon reaching the emission surface of emitter, δ is secondary electron yield, E po is incident energy of primary electron, E pom is the E po corresponding to maximum δ. The parameters obtained here were analyzed, it can be concluded that several parameters of NEASLD obtained by the methods presented here agree with those obtained by other authors. The relation between secondary electron emission and photo-emission from NEAS with large mean escape depth of excited electrons is investigated, it concludes that the presented method of obtaining λ is a more accurate method of obtaining corresponding parameter of NEAS with large λph, and that the presented method of calculating B at E po > 10.0 keV is a more widely applicable method of obtaining corresponding parameter of NEAS with large λph, λph is the mean escape depth of photo-electrons.