Second-order susceptibility χ<sup>(2)</sup> in Si waveguides

Bianco, Federica; Borga, E.; Yeremian, A.D.; Dierre, Benjamin; Fedus, Kamil; Bettotti, Paolo; Pitanti, Alessandro; Pierobon, R.; Ghulinyan, Mher; Pucker, G.; Cazzanelli, M.; Pavesi, L.

doi:10.1109/group4.2011.6053704

8th IEEE International Conference on Group IV Photonics 2011

DOI: 10.1109/group4.2011.6053704

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Second-order susceptibility χ⁽²⁾ in Si waveguides

Federica Bianco

E. Borga

A.D. Yeremian

et al.

Abstract: Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si 3 N 4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ (2) in the bulk silicon.

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Second-order susceptibility χ⁽²⁾ in Si waveguides

Abstract: Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si 3 N 4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ (2) in the bulk silicon.

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References 8 publications

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Second-order susceptibility χ(2) in Si waveguides

Abstract: Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si 3 N 4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ (2) in the bulk silicon.

Cited by 0 publications

References 8 publications

No citations

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Second-order susceptibility χ⁽²⁾ in Si waveguides