2015
DOI: 10.1088/0022-3727/48/39/395101
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Second-order nonlinear optical behavior of amorphous SiOxthin films grown by sputtering

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Cited by 2 publications
(2 citation statements)
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“…[10][11][12][13] Additionally, CMOScompatible dielectric materials such as aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), and silicon nitride (SiN x ) are reported to have extremely low v (2) because of their amorphous nature. [14][15][16] Therefore, the need for CMOS-compatible materials exhibiting prominent v (2) that can be easily integrated with modern silicon photonic material platforms is highly desirable.…”
mentioning
confidence: 99%
“…[10][11][12][13] Additionally, CMOScompatible dielectric materials such as aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), and silicon nitride (SiN x ) are reported to have extremely low v (2) because of their amorphous nature. [14][15][16] Therefore, the need for CMOS-compatible materials exhibiting prominent v (2) that can be easily integrated with modern silicon photonic material platforms is highly desirable.…”
mentioning
confidence: 99%
“…As a matter of fact, there have been some investigations about SHG of amorphous films or microcavities, but the origin is ambiguous [15,16,29,30]. Different from the situations in other amorphous structures derived from strain generated at the interface between structures and substrates, we attribute the SHG process from submicron a-Se spheres to the finity of the medium.…”
Section: Resultsmentioning
confidence: 86%