1980
DOI: 10.1002/pssa.2210590111
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Second harmonic of the acoustoelectric current in piezosemiconductors

Abstract: The second harmonic of the acoustoelectric current generation J(2ω) as a consequence of electronic concentration nonlinearity during the propagation of elastic waves at frequency ω in piezosemiconductors is investigated both, theoretically and experimentally. Bulk waves and waves in the acoustic waveguides are considered. It is shown that the current J is directly proportional to the power and electronic attenuation of the ultrasound and to the drift mobility of carriers. In the acoustic waveguides the current… Show more

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Cited by 3 publications
(2 citation statements)
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“…The dissipation of higher mechanical power (e.g., 1 W/cm-* in CdS), results in photon and electron emission and an electric charge. These effects have been attributed Bulakh 1980, Ostrovskii andKorotchenkov 1986) to donor-acceptor recombinations and to the generation of point defects due to the movement of dislocations. The surface charge may be high enough to initiate corona discharges in air at the surface of an excited piezoelectric sample.…”
Section: Charge Formed Under Mechanical Stressmentioning
confidence: 99%
“…The dissipation of higher mechanical power (e.g., 1 W/cm-* in CdS), results in photon and electron emission and an electric charge. These effects have been attributed Bulakh 1980, Ostrovskii andKorotchenkov 1986) to donor-acceptor recombinations and to the generation of point defects due to the movement of dislocations. The surface charge may be high enough to initiate corona discharges in air at the surface of an excited piezoelectric sample.…”
Section: Charge Formed Under Mechanical Stressmentioning
confidence: 99%
“…Ce champ pénètre le semiconducteur et provoque une redistribution de ses porteurs de charge qui donnent naissance à une différence de potentiel acousto-électrique longitudinale (V"ae). Utilisant la loi de Kirchhoff pour un circuit électrique : plaques-résistance externe Ro nous donnons l'expression de (Vâé) [9] : 03BC-mobilité des porteurs ; ao-conductivité du semiconducteur ; Ex sc-composante longitudinale du champ piézo-électrique dans le semi-conducteur ; Rsc-résistance du semi-conducteur. Les ondes transversales sont piézo-actives lorsqu'elles se propagent le long de l'axe cristallographique (x) avec un déplacement mécanique suivant (z) parallèle à l'axe Fig.…”
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