Second-Harmonic Generation in Vertically Coupled InAs/GaAs Quantum Dots with a Gaussian Potential Distribution: Combined Effects of Electromagnetic Fields, Pressure, and Temperature

Mahrsia, R. Ben; Choubani, M.; Bouzaı̈ene, L.; Maâref, H.

doi:10.1007/s11664-015-3760-2

Cited by 5 publications

(1 citation statement)

References 15 publications

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“…QDs are of particular interest in optical applications due to their luminescence, potential to emit different frequencies with intense efficacies, high extinction, and prolonged lifetimes [15][16][17]. For these reasons, QDs are used in other technological applications such as light-emitting diodes (LEDs), electronic transistors, medical laser imaging, biosensors, quantum cascade lasers, and quantum computing architectures [18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

GaAs Quantum Dot Confined with a Woods–Saxon Potential: Role of Structural Parameters on Binding Energy and Optical Absorption

Dakhlaoui,

Belhadj,

Elabidi

et al. 2023

Inorganics

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We present the first detailed study of optical absorption coefficients (OACs) in a GaAs quantum dot confined with a Woods–Saxon potential containing a hydrogenic impurity at its center. We use a finite difference method to solve the Schrödinger equation within the framework of the effective mass approximation. First, we compute energy levels and probability densities for different parameters governing the confining potential. We then calculate dipole matrix elements and energy differences, E1p−E1s, and discuss their role with respect to the OACs. Our findings demonstrate the important role of these parameters in tuning the OAC to enable blue or red shifts and alter its amplitude. Our simulations provide a guided path to fabricating new optoelectronic devices by adjusting the confining potential shape.

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