Second-Harmonic Generation in Vertical-Cavity Surface-Emitting Laser

Yamada, Noriko; Ichimura, Yoshikatsu; Nakagawa, Shigeru; Kaneko, Y.; Takeuchi, Tetsuya; Mikoshiba, Nobuo

doi:10.1143/jjap.35.2659

Cited by 27 publications

(21 citation statements)

References 21 publications

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“…[1][2][3][4][5][6][7][8][9] In these devices, phase mismatch in optical nonlinearities of semiconductors is overcome with quasiphase matching (QPM); multiple layered structures compensate for the phase mismatch between the fundamental wave and the second-harmonic wave. The QPM for the fundamental standing wave was proposed by Takahashi et al 4) In this QPM device, the phase mismatch between the secondharmonic wave (k = k 2ω ) and the fundamental standing wave (k ω = 0), k = k 2ω − 0, can be eliminated by modulating the second-order nonlinearities at a period of coherent length, l c = 2π/ k = λ 2ω /2n 2ω , where n 2ω is the refractive index for the second-harmonic wave.…”

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confidence: 99%

Second-Harmonic Generation from GaP/AlP Multilayers on GaP (111) Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave

Sato¹,

Yaguchi²,

Shoji³

et al. 2000

Jpn. J. Appl. Phys.

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We have demonstrated second-harmonic generation (SHG) from GaP/AlP multilayers on GaP(111)A substrates based on quasi-phase matching (QPM) for the fundamental standing wave. Theoretical calculation predicted that the SHG power increases with increasing number of GaP/AlP multilayers because of their small absorption coefficient in the spectral range of second-harmonic light, which is in contrast to the case of GaAs/AlAs QPM multilayers. In the transmission SHG measurement using a frequency-tunable Ti:Sapphire laser as a fundamental wave source, maximum SHG power was obtained at a fundamental wavelength of 990 nm from the five-pair GaP/AlP QPM multilayers. The wavelength conversion efficiency was measured to be 9.8 × 10 −10 %/W, which was smaller than the theoretical value of 6.5 × 10 −8 %/W.

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confidence: 99%

Second-Harmonic Generation from GaP/AlP Multilayers on GaP (111) Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave

Sato¹,

Yaguchi²,

Shoji³

et al. 2000

Jpn. J. Appl. Phys.

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“…The cancellation could be significantly eliminated using the different χ (2) for each cavity layer. In the normal incidence configuration, an effective χ (2) is nonzero on a high-index substrate and strongly depends on the substrate orientation [15]. Note that a 180…”

Section: Polarization Control For Efficient Dfgmentioning

confidence: 99%

“…Optical microcavities are good candidates for nonlinear optical devices because an extremely strong electric field is realized in the cavity layer sandwiched between two distributed Bragg reflector (DBR) multilayers. Efficient wavelength conversion is possible in the GaAs-based multilayer cavity when the structure is grown on a non-(001) substrate to allow the second-order nonlinearity of zincblende-type semiconductors [15]. In fact, blue vertical-cavity surface emitting lasers (VCSELs) have been demonstrated utilizing second-harmonic generation (SHG) on (113)B and (114)A GaAs substrates [16].…”

Section: Introductionmentioning

confidence: 99%

“…The electric field of each mode is greatly enhanced in both cavity layer, allowing strong frequency-mixed signal to be generated. Since the effective second-order nonlinear coefficient is zero on a (001)-oriented GaAs substrate due to crystal symmetry [15], a non-(001) substrate is essential for crystal growth. We have obtained a strong sum-frequency generation (SFG) signal from a GaAs/AlAs coupled multilayer cavity grown on a (113)B GaAs substrate when the two modes were simultaneously excited by 100 fs laser pulses [18]- [20].…”

Section: Introductionmentioning

confidence: 99%

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Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources

Kitada

Ota

et al. 2017

IEICE Trans. Electron.

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SUMMARYCompact and room-temperature operable terahertz emitting devices have been proposed using a semiconductor coupled multilayer cavity that consists of two functional cavity layers and three distributed Bragg reflector (DBR) multilayers. Two cavity modes with an optical frequency difference in the terahertz region are realized since two cavities are coupled by the intermediate DBR multilayer. In the proposed device, one cavity is used as the active layer for two-color lasing in the near-infrared region by current injection and the other is used as the second-order nonlinear optical medium for difference-frequency generation of the two-color fundamental laser light. The control of the nonlinear polarization by face-to-face bonding of two epitaxial wafers with different orientations is quite effective to achieve bright terahertz emission from the coupled cavity. In this study, two-color emission by optical excitation was measured for the waferbonded GaAs/AlGaAs coupled multilayer cavity containing self-assembled InAs quantum dots (QDs). We found that optical loss at the bonding interface strongly affects the two-color emission characteristics when the bonding was performed in the middle of the intermediate DBR multilayer. The effect was almost eliminated when the bonding position was carefully chosen by considering electric field distributions of the two modes. We also fabricated the current-injection type devices using the wafer-bonded coupled multilayer cavities. An assemble of self-assembled QDs is considered to be desirable as the optical gain medium because of the discrete nature of the electronic states and the relatively wide gain spectrum due to the inhomogeneous size distribution. The gain was, however, insufficient for two-color lasing even when the nine QD layers were used. Substituting two types of InGaAs multiple quantum wells (MQWs) for the QDs, we were able to demonstrate two-color lasing of the device when the gain peaks of MQWs were tuned to the cavity modes by lowering the operating temperature.

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“…However, potential advantages would also be offered by InAs QDs grown on high-index substrates, which are essential for terahertz emission devices based on the difference frequency generation (DFG) [7,8] because the effective second-order nonlinear coefficient is zero on the (100) orientation due to the crystal symmetry [9,10]. Several attempts have been taken on QDs grown on (311)B GaAs substrates.…”

Section: Introductionmentioning

confidence: 99%

Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap

Matsubara

Nakagawa

et al. 2015

Journal of Crystal Growth

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Second-Harmonic Generation in Vertical-Cavity Surface-Emitting Laser

Cited by 27 publications

References 21 publications

Second-Harmonic Generation from GaP/AlP Multilayers on GaP (111) Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave

Second-Harmonic Generation from GaP/AlP Multilayers on GaP (111) Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave

Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources

Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap

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