Second Generation Controlled Current Conveyors (CCCII) and Their Applications

Senani, Raj; Bhaskar, D. R.; Singh, A. K.

doi:10.1007/978-3-319-08684-2_9

Cited by 6 publications

(5 citation statements)

References 98 publications

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“…Figure 11A,B shows that as S increases, 3-dB current and voltage BWs increase. Equation (2) shows that as pitch increases, the width of a CNTFET increases, which in turn increases the drain current and hence increases the current and voltage BWs. For small S, both 3-dB voltage and current BWs are small.…”

Section: Effect Of Varying Inter Nanotube Spacing Pitch (S)mentioning

confidence: 99%

“…Current conveyors realize most of the analog circuit functions accurately and efficiently. There are various versions of second‐generation CCs like positive CCII (CCII+), negative CCII (CCII−), current controlled CC (ICCC+), and multiple‐output CC (MOCCs) 2 . Dual output current conveyor (DO‐CCII) is a CC with two complementary outputs.…”

Section: Introductionmentioning

confidence: 99%

“…There are various versions of second-generation CCs like positive CCII (CCII+), negative CCII (CCIIÀ), current controlled CC (ICCC+), and multiple-output CC (MOCCs). 2 Dual output current conveyor (DO-CCII) is a CC with two complementary outputs. DO-CCII is the realization of positive (CCII+) and negative (CCIIÀ) current conveyor from the same circuit.…”

Section: Introductionmentioning

confidence: 99%

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Novel carbon nanotube field effect transistor based dual output second‐generation current conveyor: Design and applications

Jogad

Loan

Afzal

2023

Int J Numerical Modelling

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In this work, we propose, design and simulate a new configuration of Class AB dual output (DO) second‐generation current conveyor (DO‐CCII). Two versions of this new DO‐CCII configuration are proposed: one employing 32 nm technology‐based carbon nanotube field effect transistor (CNTFET) and the other employing the conventional complementary MOS (CMOS). The HSPICE simulation studies have been performed to evaluate key performance parameters like current and voltage gains, voltage and current bandwidths (BW), the port X and Y resistances, total harmonic distortion of both proposed DO‐CCII configurations. It has been seen that ~388× and ~215× improvement in current and voltage BWs respectively have been achieved in the proposed CNTFET based DO‐CCII (CNTFET‐DO‐CCII) configuration in comparison to its CMOS counterpart (CMOS‐DO‐CCII). Similarly, desired port X and Y resistances have resulted substantially in the CNTFET based DO‐CCII configuration. Further, to evaluate the performance of proposed DO‐CCIIs, some applications such as sinusoidal oscillator, integrator and differentiator have been simulated and compared. In the designed oscillators, the effect of temperature on oscillating frequency has also been studied. A temperature insensitive behavior has been seen in the CNTFET‐DO‐CCII for a wide frequency range. Furthermore, it has been found that the optimization of number of CNTs, CNT diameter and inter‐CNT pitch of CNTFETs improve the performance of the proposed DO‐CCII.

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Section: Effect Of Varying Inter Nanotube Spacing Pitch (S)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Novel carbon nanotube field effect transistor based dual output second‐generation current conveyor: Design and applications

Jogad

Loan

Afzal

2023

Int J Numerical Modelling

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“…The comparator uses a single current controlled current conveyor of second generation (CCCII) [34,35], a voltage buffer and two resistors. Such an arrangement of active devices is called a current feedback operational amplifier (CFOA) [33].…”

Section: Readout Circuit For Capacity Measurementmentioning

confidence: 99%

“…The selected values and design specifications are very favorable for the measurement of capacity (units and hundreds of nF), especially in the field of low and medium frequency filter design. Thanks to the LP solution, the interface can be fully integrated when large values of capacities of the frequency to DC voltage converter are replaced by so called capacitance multipliers [34]. Such a solution ensures an appropriate value of the capacity (max.…”

Section: Conclusion Remarksmentioning

confidence: 99%

CMOS Current Feedback Operational Amplifier-Based Relaxation Generator for Capacity to Voltage Sensor Interface

Polák

Šotner

Petržela

et al. 2018

Sensors

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This paper presents a simple relaxation generator, suitable for a sensor interface, operating as a transducer of capacitance to frequency/period. The proposed circuit employs a current feedback operational amplifier, fabricated in I3T25 0.35 μm ON Semiconductor CMOS process, and four passive elements including a grounded capacitor (the sensed parameter). It offers a low-impedance voltage output of the generated square wave. Additional frequency to DC voltage converter offers output information in the form of voltage. The experimental capacitance variation from 6.8 nF to 100 nF yields voltage change in the range from 21 mV to 106 mV with error below 5% and sensitivity 0.912 mV/nF evaluated over the full range of change. These values are in good agreement with simulation results obtained from the Mathcad model of frequency to DC voltage transducer passive circuit.

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