Second breakdown and damage in junction devices

Smith, Wallace B.; Pontius, D. H.; Budenstein, Paul P.

doi:10.1109/t-ed.1973.17735

Cited by 63 publications

(8 citation statements)

References 25 publications

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“…[12][13][14][15][16][17][18] We propose that in our devices the role of such a resistive layer is played by BL ͑the sinker with a higher doping concentration is not considered͒, see Fig. 1.…”

Section: Resultsmentioning

confidence: 89%

“…2,3,11 However, the self-heating effect has not been previously considered as the driving force for the interaction between multiple CFs. [12][13][14][15][16][17][18] Here we report on observations of multiple traveling CFs in avalanching n-p-n transistor structures used as ESD protections devices. We focused on the interaction between two traveling CFs that are globally coupled by a fixed total device current.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Interaction of traveling current filaments and its relation to a nontrivial thermal breakdown scenario in avalanching bipolar transistor

Mamanee

Johnsson

Rodin

et al. 2009

Journal of Applied Physics

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Traveling multiple current filaments (CFs) are investigated by transient interferometric mapping method in avalanching bipolar n-p-n transistors. The number of CFs can vary for identical current pulses and their averaged number increases with the total current. The CF movement is driven by a temperature gradient in it, caused by the self-heating effect. For pulses of 500 ns duration, the existence of two CFs appears dangerous as it causes a nontrivial premature thermal breakdown (TB), which does not occur when only one CF exists at the same current level. TB occurs due to redistribution of current between the two CFs. The current components flowing through each CF depend on CF temperature and are globally coupled by a fixed device current. When a first CF reaches the device end, it heats up and disappears due to vanishing impact ionization rate in it. When a second traveling CF, taking consequently the whole current, reaches the already preheated device end, a TB event occurs. The transition from two to one filament mode is accompanied by a voltage step of 1 V, which is related to a finite resistance of CF access region.

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Section: Resultsmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Interaction of traveling current filaments and its relation to a nontrivial thermal breakdown scenario in avalanching bipolar transistor

Mamanee

Johnsson

Rodin

et al. 2009

Journal of Applied Physics

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“…The silicon crystal structure and diffused or implanted dopant profiles are quite stable in typical SIC's operating at normal current densities and junction temperatures. This is not necessarily true of other semiconductors such as power switching transistors and microwave devices 39,40 where local hot spots may cause extensive changes in the silicon crystal structure, or in photo-optical devices such as heterojunction lasers^l and light-emitting diodes where the growth of crystal defects can drastically effect device operation. For SIC's, however, the only significant problem with the silicon is the growth of cracks as a result of stress relief, thermal stress or mechanical stress.…”

Section: Siliconmentioning

confidence: 99%

NBSDOE Workshop, stability of (thin film) solar cells and materials

Sawyer¹,

Schafft²

1979

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A workshop was held to discuss what needs to be done to achieve and measure long term stability of terrestrial solar cells using thin film materials and device technologies. Under this theme, researchers in the field and invited speakers from related device technologies presented papers and took part in discussions related to solar cells of the following three material groupings: (1) Cu 2 S/ [CdZn] S , Cu-ternaries/CdS , InP/CdS, and amorphous Si; (2) polycrystall ine , metal-insulator-semiconductor (MIS), and conducting-oxide Si; and (3) polycrystall ine and antiref lection-coated metal-oxide-semiconductor (AMOS) GaAs. This workshop report contains the 18 papers presented and the reports of three discussion groups; it also includes a section on the highlights of these papers and reports. The many needs identified by the workshop participants can be organized into two general areas of work to be done. One area of work is in the development of an improved understanding of cell operation and of component structures of these cells. The other is in the development of an improved measurements base.

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“…However, the effects observed in Figure 1 are similar to the melt transition caused by second breakdown of a P-N junction. 23 Increased current density in the melt region may result in a reduced power dissipation capability and operating life.…”

Section: Damage To Devicesmentioning

confidence: 99%