The axio electric effect in silicon atoms is sought for solar axions appearing owing to bremsstrahl ung and the Compton process. Axions are detected using a Si(Li) detector placed in a low back ground setup. As a result, a model independent constraint on the axion-electron coupling con stant ≤ 2.2 × 10 -10 has been obtained, which leads to the bounds m A ≤ 7.9 eV and m A ≤ 1.4 eV (at 90% C.L.) for the mass of the axion in the DFSZ and KSVZ models, respectively.