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Chang, M. C.; Chang, P.; Abe, K.; Abe, T.; Adachi, I.; Aihara, H.; Akatsu, M.; Asano, Y.; Aso, T.; Aulchenko, V.; Aushev, T.; Bakich, A. M.; Bedny, I.; Bizjak, I.; Bondar, A.; Bożek, A.; Bračko, M.; Brodzicka, J.; Browder, T. E.; Chào, Y.; Chen, K. F.; Cheon, B. G.; Chistov, R.; Choi, S. K.; Choi, Y.; Chuvikov, A.; Liu, Dong; Eidelman, S.; Eiges, V.; Fukunaga, C.; Gabyshev, N.; Gershon, T.; Gokhroo, G.; Golob, B.; Hara, T.; Hayashii, H.; Hazumi, M.; Higuchi, T.; Hinz, L.; Hokuue, T.; Hoshi, Y.; Hou, W.-S.; Hsiung, Y.; Huang, Hsuan‐Cheng; Iijima, T.; Inami, K.; Ishikawa, A.; Itoh, R.; Iwasaki, H.; Iwasaki, M.; Iwasaki, Y.; Kang, J. H.; Kang, J. S.; Kapusta, P.; Kawai, H.; Kawasaki, T.; Kichimi, H.; Kim, H. J.; Kim, J. H.; Kim, S. K.; Kinoshita, K.; Koppenburg, P.; Korpar, S.; Krokovny, P.; Kuzmin, A.; Kwon, Y. J.; Lee, S. H.; Lesiak, T.; Li, J.; Limosani, A.; Lin, S. W.; MacNaughton, J.; Mandl, F.; Marlow, D.; Matsumoto, T.; Matyja, A.; Mitaroff, W.; Miyake, H.; Miyata, H.; Mohapatra, D.; Mori, Takashi; Nagamine, T.; Nagasaka, Y.; Nakano, E.; Nakao, M.; Nakazawa, H.; Natkaniec, Z.; Nishida, S.; Nitoh, O.; Noguchi, S.; Ogawa, S.; Ohshima, T.; Okabe, T.; Okuno, S.; Olsen, S. L.; Ostrowicz, W.; Ozaki, H.; Pakhlov, P.; Park, H.; Parslow, N.; Piilonen, L. E.; Różańska, M.; Sagawa, H.; Saitoh, Saburou; Sakai, Y.; Sarangi, T.; Schneider, O.; Schümann, J.; Schwartz, A. J.; Semenov, S.; Sevior, M. E.; Shibuya, H.; Shwartz, B.; Sidorov, V.; Singh, J. B.; Soni, N.; Stanič, S.; Starič, M.; Sugi, A.; Sugiyama, A.; Sumisawa, K.; Sumiyoshi, T.; Suzuki, S.; Takasaki, F.; Tamura, N.; Tanaka, M.; Teramoto, Y.; Tomura, T.; Tsuboyama, T.; Tsukamoto, T.; Uehara, S.; Ueno, K.; Uno, S.; Varner, G.; Varvell, K. E.; Wang, C. C.; Wang, C. H.; Wang, M. Z.; Watanabe, Y.; Yabsley, B.; Yamada, Y.; Yamaguchi, A.; Yamashita, Y.; Yamauchi, M.; Yanai, Haruo; Ying, J.; Yuan, Y.; Yusa, Y.; Zhang, Z. P.; Zhilich, V.; Ziegler, Thomas; Žontar, D.

doi:10.1103/physrevd.68.111101

Cited by 87 publications

(131 citation statements)

References 28 publications

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“…Recall, therefore, that for meson bound-states it is now possible [75][76][77] to employ sophisticated kernels which overcome many weaknesses of RL truncation. The new technique is symmetry preserving and has an additional strength, i.e.…”

Section: B Interaction Kernelmentioning

confidence: 99%

Elastic electromagnetic form factors of vector mesons

Binosi

Cui

et al. 2019

Phys. Rev. D

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A symmetry-preserving approach to the two valence-body continuum bound-state problem is used to calculate the elastic electromagnetic form factors of the ρ-meson and subsequently to study the evolution of vector-meson form factors with current-quark mass. To facilitate a range of additional comparisons, K * form factors are also computed. The analysis reveals that: vector mesons are larger than pseudoscalar mesons; composite vector mesons are non-spherical, with magnetic and quadrupole moments that deviate ∼ 30% from point-particle values; in many ways, vector-meson properties are as much influenced by emergent mass as those of pseudoscalars; and vector meson electric form factors possess a zero at spacelike momentum transfer. Qualitative similarities between the electric form factors of the ρ and the proton, G p E , are used to argue that the character of emergent mass in the Standard Model can force a zero in G p E . Morover, the existence of a zero in vector meson electric form factors entails that a single-pole vector meson dominance model can only be of limited use in estimating properties of off-shell vector mesons, providing poor guidance for systems in which the Higgs-mechanism of mass generation is dominant. *

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Section: B Interaction Kernelmentioning

confidence: 99%

Elastic electromagnetic form factors of vector mesons

Binosi

Cui

et al. 2019

Phys. Rev. D

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“…Migration reactions of hydrogen, H, have earlier been theoretically investigated for the principal diamond surfaces (111), (110), and (100) [24][25][26][27][28][29][30]. H atoms were then found to migrate with an energy dependent on the path between neighboring sites, as well as dependent on different directions on the surface.…”

Section: Surface Migration Towards Step Sitesmentioning

confidence: 99%

“…[23] was obtained for the migration of the more stable triplet state ( 3 B 1 ) of CH 2 (52 kJ/mol). Single jumps of CH 2 between neighboring radical C sites, on an otherwise H-terminated diamond (111) surface, may then occur within the lifetime of the surface radical site (60 ms [28] or 180 ms [30]). A CVD gas mixture, containing CH 2 as the carbon-containing species would, hence, be energetically ideal due to its large adsorption energy (416 kJ/mol) and high probability for surface migration.…”

Section: Surface Migration Towards Step Sitesmentioning

confidence: 99%

Incorporation of C into Growth Steps of Diamond (111)

Larsson

Carlsson

2001

phys. stat. sol. (a)

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Different surface processes occuring during growth of diamond (111) have theoretically been investigated by using various quantum mechanical methods (including molecular dynamic simulations). A final incorporation of C-containing growth precursors into the diamond (111) lattice was then of a special interest to study. It was observed that a H atom in the adsorbed CH 3 and C 2 H 2 species will, at an experimental temperature of 1200 K, quickly migrate over to a neighboring surface radical site. Then leaving adsorbed CH 2 and C 2 H species, respectively. An excess of CH 2 adsorbates would be energetically ideal due to its large possibility for surface migration and its strong adsorption to both terraces and growth steps at diamond (111). The low possibility for surface migration of C 2 H, together with strong chemisorption to step edges, may lead to secondary nucleation (non-smooth surfaces). A final incorporation of CH 2 and C 2 H into the lattice at the growth step type A will most probable result in non-defect diamond.

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“…Despite several works over the years, the identity of the precursor species for diamond growth is still under discussion. On the one hand, based on either theoretical approach [6][7][8][9][10] or measurements of the gas composition near the substrate, [11,12] it has been suggested that either C 2 H 2 or C 2 H could play a significant role on diamond growth mechanisms. Some molecular dynamics simulations have been carried out in order to reproduce the surface processes for these two species.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Calculations of CH₃ Sticking Coefficient onto Diamond Surfaces

Schwaederlé

Brault

Rond

et al. 2015

Plasma Processes & Polymers

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A molecular dynamics model is implemented in a way dedicated to simulate initial conditions close to microwave plasma deposition of thick single crystal diamond films. The sticking coefficient of CH3 radical is obtained for (111) and (100) surface at three gas and substrate temperatures: 1 120, 1 200, and 1 500 K. A low value of 5.10−4 is obtained, which is consistent with experimental findings claiming values less than 0.01 or equating to 8.10−3 at 1 120 K.

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Search forB0→l+l−

Cited by 87 publications

References 28 publications

Elastic electromagnetic form factors of vector mesons

Elastic electromagnetic form factors of vector mesons

Incorporation of C into Growth Steps of Diamond (111)

Molecular Dynamics Calculations of CH₃ Sticking Coefficient onto Diamond Surfaces

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Search forB0→l+l−

Cited by 87 publications

References 28 publications

Elastic electromagnetic form factors of vector mesons

Elastic electromagnetic form factors of vector mesons

Incorporation of C into Growth Steps of Diamond (111)

Molecular Dynamics Calculations of CH3 Sticking Coefficient onto Diamond Surfaces

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Product

Resources

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Molecular Dynamics Calculations of CH₃ Sticking Coefficient onto Diamond Surfaces