Sculptured anti-reflection coatings for high power lasers

Tolenis, Tomas; Grinevičiūtė, Lina; Buzelis, Rytis; Smalakys, Linas; Pupka, Egidijus; Melnikas, Simas; Selskis, Algirdas; Drazdys, Ramutis; Melninkaitis, Andrius

doi:10.1364/ome.7.001249

Cited by 51 publications

(16 citation statements)

References 19 publications

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“…The absolute value of the compressive stress in a normally deposited film (upper row in Figure 3) was in the range of experimental data [1,2,26]. The change of stress from compressive to tensile with the growth of deposition angle was observed experimentally for the silicon dioxide films fabricated by electron beam evaporation [27]. Such a change was detected in our simulation (see results for α = 70° in Figure 3).…”

Section: Resultssupporting

confidence: 80%

Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

Grigoriev¹,

Сулимов²,

Tikhonravov³

2020

Coatings

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Dependence of stress values in silicon dioxide films on its thickness in the initial stage of film growth was investigated using atomistic molecular dynamics simulation. It was shown that the stress in normally deposited films was compressive and varied slightly with growth of film thickness. The stress in the glancing angle deposited films was several times lower than the stress in the normally deposited films, and varied from compressive stress to tensile stress with increasing film thickness. An essential anisotropy of stress tensor components was revealed for the case of glancing angle deposition. The calculated stress values were in the interval of experimental data.

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Section: Resultssupporting

confidence: 80%

Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

Grigoriev¹,

Сулимов²,

Tikhonravov³

2020

Coatings

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“…GLAD films are used in linear polarizers [3], liquid crystal displays as alignment layers [4], optical coatings with low reflectance [5], and anti-reflection coatings for high power lasers [6]. GLAD, with alternation of deposition angle, ensures the fabrication of thin films for polarization rotators [7], birefrigent reflectors [8], and other optical devices requiring films with anisotropic properties and low refractive indexes.…”

Section: Introductionmentioning

confidence: 99%

Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation

2019

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The high-energy glancing angle deposition of silicon dioxide films with alternation of deposition angle is studied using classical atomistic simulation. Both slow and fast alternations are investigated. The growth of vertical tree-like columns and chevron-like regular structures is demonstrated under fast and slow alternations, respectively. Due to high porosity, the density of the deposited silicon dioxide films is reduced to 1.3 ÷ 1.4 g/cm3. This results in reduction of the refractive index to 1.3, which agrees with known experimental data. For slow continuous substrate rotation, formation of a helical structure is demonstrated.

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“…The uncoated Suprasil 1 fused silica substrate exhibited a 0%‐LIDT of (114.7 ± 7.5) J cm −2 after 3000 pulses of irradiation at the 1064 nm wavelength whereas the corresponding value for the 1064 nm AR coated sample was (92.8 ± 6.0) J cm −2 . Although direct comparison of the LIDT values found in literature for AR coatings manufactured with different deposition technologies is not possible due to the varying substrate quality and measurement conditions, the value determined here is to our knowledge one of the highest reported in literature . Most importantly, the AR coated sample has nearly the same LIDT value as the uncoated substrate.…”

Section: Properties Of Nanoporous Sio2 Coatingsmentioning

confidence: 61%

On the Properties of Nanoporous SiO₂ Films for Single Layer Antireflection Coating

et al. 2019

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Single layer antireflection coatings (SLAR) consisting of nanoporous silica (NP SiO 2 ) films are developed by selective chemical etching of atomic layer deposited (ALD) Al 2 O 3 :SiO 2 composite films. The reflective index of the final NP SiO 2 film is finely adjusted from 1.132 to 1.400 at 600 nm wavelength by applying an appropriate ratio in the composite. To meet the requirements of the SLAR coatings from the deep UV (DUV) to the near IR (NIR) spectral range, the film thickness is controlled with nanometer precision by the ALD process. The SLAR are simultaneously applied on both sides of flat or highly curved substrates. Transmittance values above 99.4% are achieved even at a wavelength of 193 nm on fused silica substrates. Various characterization methods demonstrate the advantages of these SLAR with regard to impurities, optical losses, laser induced damage threshold (LIDT) properties, and surface super-hydrophilicity. The absorption losses at 193 nm wavelength as determined by laser induced deflection measurements amount to approximately 200 ppm, and to approximately 2 ppm at a wavelength of 1064 nm, while the scattering losses are around 30 ppm at 532 nm wavelength for quarter-wave layers. The LIDT values at 1064 nm are in the range of 93 J cm À2 being close to the values measured on the uncoated substrate.

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Sculptured anti-reflection coatings for high power lasers

Cited by 51 publications

References 19 publications

Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation

On the Properties of Nanoporous SiO₂ Films for Single Layer Antireflection Coating

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Sculptured anti-reflection coatings for high power lasers

Cited by 51 publications

References 19 publications

Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

Atomistic Simulation of Stresses in Growing Silicon Dioxide Films

Structure of Highly Porous Silicon Dioxide Thin Film: Results of Atomistic Simulation

On the Properties of Nanoporous SiO2 Films for Single Layer Antireflection Coating

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On the Properties of Nanoporous SiO₂ Films for Single Layer Antireflection Coating