Screw and edge dislocation damping in germanium

Calzecchi, F.; Gondi, P.; Mantovani, S.

doi:10.1007/bf02711539

Cited by 6 publications

(3 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In an overdamped condition the dislocation can be viewed as moving as a straight line; and the magnitude of the damping is controlled entirely 62 viscous drag, independent of line tension and pinning length. 14,15,16,19,20 Previ6us measurements, in agreement with the study reported here, have shoWn that the KHz frequency range dislocation dependent damping is proportional to inverse frequency and independent of strain amplitude. This 22 allows us, under assumption of the validity of Granato-LUcke theory, to ignore the presence of pinning.points or line tension and conclude that the measured -damping is due entirely to viscous drag.…”

supporting

confidence: 90%

See 1 more Smart Citation

Internal friction in intrinsic and n-type germanium and silicon

Gerk

Williams

1982

Journal of Applied Physics

View full text Add to dashboard Cite

The dependence of the high-temperature internal friction of germanium and silicon, both intrinsic and highly n type, was measured as a function of temperature, frequency, dislocation density, and dopant concentration. An acoustoelectric peak in both germanium and silicon was detected and found to agree well with the theory of Weinreich. The high-temperature dislocation-dependent damping in intrinsic germanium and silicon was studied and seen to be consistent with most previous studies. If deformed at high temperature and allowed to anneal, highly doped n-type material behaved intrinsically due to preferential precipitation at dislocations; however, if deformed at moderate temperatures and not allowed to anneal, such crystals exhibited a greatly enhanced dislocation-dependent internal friction which depended on the extrinsic carrier concentration. A theory was developed for dislocation damping in semiconductors and was found to agree well with experimental results. The model is based upon electronic viscous damping of dislocations by excess current carriers whose lifetimes are controlled by Auger recombination processes.

show abstract

supporting

confidence: 90%

“…Measurements of the high temperature, dislocation dependent internal 13,14,15,16,17 14,18,19,20 friction found in germanium and silicon have smaller 4 activation energies than those found by etch pit measurements (% 1.1 ev as compared witli 1.6 ev for germanium and 0 1.6 ev as compared with 2 2 ev for 7.16,19,20,21 silicon).…”

Section: /T°kmentioning

confidence: 74%

Internal friction in intrinsic and n-type germanium and silicon

Gerk

Williams

1982

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…14, 15,16,19,20 Previ6us measurements, in agreement with the study reported here, have shoWn that the KHz frequency range dislocation dependent damping is proportional to inverse frequency and independent of strain amplitude. This 22 allows us, under assumption of the validity of Granato-LUcke theory, to ignore the presence of pinning.points or line tension and conclude that the measured -damping is due entirely to viscous drag.…”

supporting

confidence: 89%

Internal friction in intrinsic and N-type germanium and silicon

Gerk

1974

View full text Add to dashboard Cite

Internal friction in deformed germanium single crystals

Ohori

Sumino

1972

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

The internal friction of germanium single crystals is investigated in the temperature range from 77 to 503 °K at resonance frequencies of about 1200 Hz. Two relaxation peaks P1 and P2 with activation energies of (0.62 ± 0.03) and (0.85 ± 0.03) eV, respectively, are observed to develop in deformed crystals. The height of peak P1 increases drastically upon deformation while it decreases gradually upon annealing. Peak P1 is interpreted to be associated with the motion of geometrical kinks on dislocations. Peak P2 develops only after a moderate plastic deformation followed by a subsequent annealing. It could be interpreted to be associated with the motion of dislocations in the surface region by means of single kink formation.

show abstract

Screw and edge dislocation damping in germanium

Cited by 6 publications

References 9 publications

Internal friction in intrinsic and n-type germanium and silicon

Internal friction in intrinsic and n-type germanium and silicon

Internal friction in intrinsic and N-type germanium and silicon

Internal friction in deformed germanium single crystals

Contact Info

Product

Resources

About