Screening strategy for developing thermoelectric interface materials

Abstract

Thermoelectric interface materials (TEiMs) are essential to the development of thermoelectric generators. Common TEiMs use pure metals or binary alloys but have performance stability issues. Conventional selection of TEiMs generally relies on trial-and-error experimentation. We developed a TEiM screening strategy that is based on phase diagram predictions by density functional theory calculations. By combining the phase diagram with electrical resistivity and melting points of potential reaction products, we discovered that the semimetal MgCuSb is a reliable TEiM for high-performance MgAgSb. The MgCuSb/MgAgSb junction exhibits low interfacial contact resistivity (ρ c <1 microhm square centimeter) even after annealing at 553 kelvin for 16 days. The fabricated two-pair MgAgSb/Mg 3.2 Bi 1.5 Sb 0.5 module demonstrated a high conversion efficiency of 9.25% under a 300 kelvin temperature gradient. We performed an international round-robin testing of module performance to confirm the measurement reliability. The strategy can be applied to other thermoelectric materials, filling a vital gap in the development of thermoelectric modules.

All-SnTe-Based Thermoelectric Power Generation Enabled by Stepwise Optimization of n-Type SnTe

“…As depicted in Figure d, our all-SnTe-based thermoelectric device achieved a maximum power generation efficiency of ∼2.7% at a Δ T of 350 K, demonstrating an important breakthrough for promoting the fabrication and application of environmentally friendly all-SnTe-based devices. However, it is worth noting that there is still significant room for improvement in the power generation performance of the all-SnTe-based thermoelectric devices, which still requires extensive efforts on not only developing high-performance n-type SnTe comparable to that of p-type samples but also investigating more on the interfacial structure and geometry design on the device level …”

“…However, it is worth noting that there is still significant room for improvement in the power generation performance of the all-SnTe-based thermoelectric devices, which still requires extensive efforts on not only developing high-performance n-type SnTe comparable to that of p-type samples but also investigating more on the interfacial structure and geometry design on the device level. 56…”

Synergistically Optimized Thermoelectric and Mechanical Properties of Mg3.2Bi1.5Sb0.5-SiC Composites

“…3 In addition, excellent mechanical properties are also crucial for practical applications of thermoelectric devices. 4 This is because thermoelectric devices often suffer complex thermomechanical coupling environments and therefore thermal stress inside the interface between thermoelectric material and barrier layer matters, 5,6 which requires thermoelectric material itself to have good mechanical properties. However, Bi 2 Te 3based thermoelectric materials, which are currently used widely in major commercial applications, have the disadvantages of poor mechanical properties, rooted in the weak van der Waals interaction between two quintuple layers, 7 which limits their application in complex working conditions.…”

A high performance eco-friendly MgAgSb-based thermoelectric power generation device near phase transition temperatures

“…33 However, p-type MgAgSbbased TE devices have seen fewer advancements. 34,35 MgAgSb received intensive attention since 2012. 36,37 Subsequently, Zhao et al, 38 Liu et al, 39 Ying et al, 40 Shuai et al, 41 and Zheng et al 42 reported high ZT and PF with good mechanical properties from RT to 300 1C.…”

“…In addition, the internal resistance of MgAgSb-based devices has increased during the service process, 35,46 suggesting that Ag may not be the optimal solution. 35 Recently, researchers also put lots of effort in the paired MgAgSb-Mg 3 Sb 2Àx Bi x TE device for near room temperature cooling 28,29,46 and power generation. 18,28,34,35,45,46 For example, Xie et al 35 developed a novel engineering roadmap, thereby obtaining MgCuSb TEiMs and then efficiently achieving a high Z of 9.25% under a 300 1C temperature gradient.…”