Screening and collective modes in disordered graphene antidot lattices

Yuan, Shengjun; Jin, Fengping; Roldán, Rafael; Jauho, Antti–Pekka; Katsnelson, M. I.

doi:10.1103/physrevb.88.195401

Cited by 14 publications

(18 citation statements)

References 50 publications

(92 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It may, however, be possible to control the antidot edge geometries to some extent by heat treatment [38,45] or selective etching [37,46]. Much like the properties of nanoribbons were found to be greatly affected by disorder [47,48], recent studies suggest that the electronic and optical properties of GALs may also be strongly perturbed [21,22,24,27]. We should therefore expect that the transport properties and device fidelity of the systems described above will depend on the degree of disorder present in the antidot lattice.…”

Section: Introductionmentioning

confidence: 99%

Electronic transport in disordered graphene antidot lattice devices

Power

Jauho

2014

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems have been investigated with a view towards application in transistor or waveguiding devices. The desired properties have been predicted for atomically precise systems, but fabrication methods will introduce significant levels of disorder in the shape, position and edge configurations of individual antidots. We calculate the electronic transport properties of a wide range of finite graphene antidot devices to determine the effect of such disorders on their performance. Modest geometric disorder is seen to have a detrimental effect on devices containing small, tightly packed antidots which have optimal performance in pristine lattices. Larger antidots display a range of effects which strongly depend on their edge geometry. Antidot systems with armchair edges are seen to have a far more robust transport gap than those composed from zigzag or mixed edge antidots. The role of disorder in waveguide geometries is slightly different and can enhance performance by extending the energy range over which waveguiding behaviour is observed.

show abstract

Section: Introductionmentioning

confidence: 99%

Electronic transport in disordered graphene antidot lattice devices

Power

Jauho

2014

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

show abstract

“…where ( [19,21,22] studied these disorders separately, we also consider the situation where these two types of disorder coexist, as illustrated in Fig. 1(d).…”

Section: A Modelsmentioning

confidence: 99%

“…Fluctuations of radii and centers can be regarded as radius and center disorder, respectively, which are collectively referred to as geometrical disorder [19,21,22]. We quantify the radius disorder by δ R in such a way that the radii R i of the antidots take the following values with uniform probability:…”

Section: A Modelsmentioning

confidence: 99%

“…The conduction properties of GALs with anisotropic disorder have been studied by Pedersen et al [20]. Yuan et al [21,22] have studied optical conductivity properties of GALs using an efficient numerical method based on Kubo formulas. Although their method can be used to study realistically sized samples, it cannot adequately handle localization effects; see Ref.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electronic and transport properties in geometrically disordered graphene antidot lattices

2015

View full text Add to dashboard Cite

A graphene antidot lattice, created by a regular perforation of a graphene sheet, can exhibit a considerable band gap required by many electronics devices. However, deviations from perfect periodicity are always present in real experimental setups and can destroy the band gap. Our numerical simulations, using an efficient linearscaling quantum transport simulation method implemented on graphics processing units, show that disorder that destroys the band gap can give rise to a transport gap caused by Anderson localization. The size of the defect induced transport gap is found to be proportional to the radius of the antidots and inversely proportional to the square of the lattice periodicity. Furthermore, randomness in the positions of the antidots is found to be more detrimental than randomness in the antidot radius. The charge carrier mobilities are found to be very small compared to values found in pristine graphene, in accordance with recent experiments.

show abstract

“…A major issue is the deterioration of the graphene sheet quality and the difficulty in maintaining a uniform size and separation of antidots throughout the lattice. Indeed, the band-gap behavior predicted for certain lattice geometries [23,24,[38][39][40][41][42][43][44][45] is particularly sensitive to small levels of geometric disorder, which may not be possible to eliminate in experiment [46][47][48][49][50][51]. Although such uniformity is not an essential ingredient for commensurability oscillations, invasive etching processes usually reduce the mean free path significantly so that electrons are principally scattered by defects and not antidots, thus suppressing commensurability effects.…”

Section: Introductionmentioning

confidence: 99%