Scintillator Material Growth

Nestor, O. H.

doi:10.1557/proc-16-77

Cited by 5 publications

(3 citation statements)

References 8 publications

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“…Such crystals are not truly single, but rather contain five to ten components as delineated by small-angle grain boundaries which crop out at the surface or are evident under strong illumination due to scattering by impurities on the boundaries [16]. Alkali halide crystals ranging up to 30 inches (~ 75 cm) in diameter and half a ton of mass can be grown.…”

Section: Materials Preparation (Crystal Growth)mentioning

confidence: 99%

“…The distribution coefficient of thallium in the alkali halide was measured to be about 0.2 for NaI [16] and 0.1 for CsI [) '7], using the ratio TI+ concentration in the crystalffl+ concentration in the melt. The distribution coefficient of thallium in the alkali halide was measured to be about 0.2 for NaI [16] and 0.1 for CsI [) '7], using the ratio TI+ concentration in the crystalffl+ concentration in the melt.…”

Section: Materials Preparation (Crystal Growth)mentioning

confidence: 99%

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X-Ray Phosphors and Scintillators (Counting Techniques)

Blasse¹,

Grabmaier

1994

Luminescent Materials

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In Chapter 8, the excitation was exclusively by X-ray irradiation. In this chapter the stress will be on other types of ionising radiation such as 'Y rays and charged particles. In many cases, their energy will be higher than that of X rays. In all applications the counting of the number of ionizing events is essential. This method of radiation detection gives information on quantities such as the kind of radiation, the intensity, the energy, the time of emission, the direction and the position of the emission. Many of the applications use luminescent materials in the form of large single crystals.The organisation of this chapter is as follows. In Sect. 9.2 the principles of the interaction between ionizing radiation and condensed matter will be dealt with. In Sect. 9.3 the principles of several applications will be discussed and the material requirements specified. The preparation of the materials will concentrate on single crystal growth and will be discussed in Sect.9.4. Finally Sect. 9.5 will give a survey of the several materials in use and Sect. 9.6 will present a future outlook. For more details than presented here, the reader is referred to the proceedings of a recent workshop [I]. The Interaction of Ionizing Radiation with Condensed MatterThere are three ways in which ionizing (electromagnetic) radiation interacts with matter, viz.-the photoelectric effect -the Compton effect -pair production.

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Section: Materials Preparation (Crystal Growth)mentioning

confidence: 99%

Section: Materials Preparation (Crystal Growth)mentioning

confidence: 99%

X-Ray Phosphors and Scintillators (Counting Techniques)

Blasse¹,

Grabmaier

1994

Luminescent Materials

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“…Halide scintillators were traditionally grown using melting methods in the industrial scale, mainly including Kyropoulos, − Bridgeman-Stockbarger method, Czochralski method, film-fed growth method and their modifications. , Other crystal-growing methods like edge-defined film-fed growth and the micro-pulling-down (μ-PD) method have also been thoroughly studied to improve the distribution of the doped ions in the crystals and the growth speed of the crystal. In addition, many efforts have also been devoted to lowering the production cost. − A relatively simple and cost-effective technique, the so-called skull-melting method, has been developed to grow large-block polycrystals with high optical transparency and optimal scintillation performance.…”

Section: Introductionmentioning

confidence: 99%

Approaching the Theoretical Light Yield Limit in CsI (Tl) Scintillator Single Crystals by a Low-Temperature Solution Method

Wang

Liu

et al. 2020

Crystal Growth & Design

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A nonvacuum solution-based growth process featuring an inverse temperature crystallization was demonstrated to grow high light yield halide scintillator single crystals. The asgrown Tl-doped cesium iodide, CsI(Tl), single crystals exhibit high transparency and characteristic Tl-doped photoluminescence and X-ray excited luminescence spectra with a decay time of about 535 ns at 550 nm emission peak. The CsI(Tl) scintillator with a low Tl doping concentration of 146.7 ppm grown by the solvent-based growth method exhibits a high light yield of 119 000 ± 6000 photons/MeV, which is about 1.3 times higher than those grown by the conventional melting method with a higher Tl concentration. This simple and convenient process may present a promising low-cost method for the mass production development of halide scintillator single crystals.

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