Scintillating screens based on the LPE grown Tb 3 Al 5 O 12 :Ce single crystalline films

Zorenko, Yuriy; Douissard, Paul-Antoine; Martin, Thierry; Riva, F.; Gorbenko, V.; Zorenko, T.; Paprocki, K.; Iskalieva, Aizhan; Witkiewicz, Sandra; Fedorov, A.; Bilski, P.; Twardak, A.

doi:10.1016/j.optmat.2016.09.066

Cited by 27 publications

(15 citation statements)

References 16 publications

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“…Namely, the Tb1.5Gd1.5Al2.5Ga2.5O12:Ce (PbO) SCF possess excellent scintillation properties (Table 1 and Figure 7). The photoelectron LY of this SCF sample significantly overcomes the LY of the best samples of LuAG:Ce SCF [53], Lu1.5Gd1.5Al2.75Ga2.25O12:Ce SCF [31] and Tb3Al5O12:Ce SCF [21], grown from PbO based flux, up to 1.85, 2.62 and 1.95 times, respectively (see Table 1). This LY is the highest one ever obtained in our group for the garnet SCF scintillators grown by the LPE from traditional PbO-B2O3 based flux [21,31,36,38,53].…”

Section: Photoelectron Light Yield Measurementsmentioning

confidence: 84%

“…Generally, the Tb3−xGdxAl5−yGayO12:Ce SCF scintillators demonstrate the notably slower non-exponential kinetics similarly to their YAG:Ce and LuAG:Ce SCF counterparts [21,36]. Such slower decay kinetics of the Ce 3+ luminescence is typical for Tb 3+ and Gd 3+ based SCF scintillators, where the cascade energy transfer via both sublattices of Gd 3+ and Tb 3+ cations is more complicated [36] in comparison with their YAG:Ce and LuAG:Ce SCF analogues, where the direct energy transfer from the garnet host to Ce 3+ ions dominates [21]. The influence of Ga 3+ and Gd 3+ alloying on the scintillation decay of Tb3−xGdxAl5−yGayO12:Ce (PbO) SCFs was firstly considered in [36].…”

Section: Scintillation Decay Kineticsmentioning

confidence: 98%

“…Such slower decay kinetics of the Ce 3+ luminescence is typical for Tb 3+ and Gd 3+ based SCF scintillators, where the cascade energy transfer via both sublattices of Gd 3+ and Tb 3+ cations is more complicated [36] in comparison with their YAG:Ce and LuAG:Ce SCF analogues, where the direct energy transfer from the garnet host to Ce 3+ ions dominates [21]. Alloying of Gd 3+ ions in Tb3Al5−yGayO12:Ce (PbO) SCFs in the concentration range x = 0-1.5 has an opposite effect than the Ga 3+ alloying and leads to the notable red shift of their CL spectra.…”

Section: Scintillation Decay Kineticsmentioning

confidence: 98%

“…The TSL in these SCFs arises at the thermal liberation of electrons from traps and their recombination with the holes localized around Ce 3+ ions [21,28,33,42,43]. Taking into account the low temperature of SCF preparation in oxygen containing atmosphere (air), the formation of these traps can be caused mainly by the presence of Pb 2+ and Ba 2+ (from flux) and Pt 4+ (from crucible) contaminations in SCF samples.…”

Section: Tsl Propertiesmentioning

confidence: 99%

“…Taking into account the low temperature of SCF preparation in oxygen containing atmosphere (air), the formation of these traps can be caused mainly by the presence of Pb 2+ and Ba 2+ (from flux) and Pt 4+ (from crucible) contaminations in SCF samples. This leads to the creation of different locally non-compensated lattice defects, such as the oxygen or cation vacancies, around the mentioned impurities, which act as trapping centers [21,31,36,53,54].…”

Section: Tsl Propertiesmentioning

confidence: 99%

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LPE Growth of Single Crystalline Film Scintillators Based on Ce3+ Doped Tb3−xGdxAl5−yGayO12 Mixed Garnets

et al. 2017

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Abstract:The growth of single crystalline films (SCFs) with excellent scintillation properties based on the Tb 1.5 Gd 1.5 Al 5−y Ga y O 12 :Ce mixed garnet at y = 2-3.85 by Liquid Phase Epitaxy (LPE) method onto Gd 3 Al 2.5 Ga 2.5 O 12 (GAGG) substrates from BaO based flux is reported in this work. We have found that the best scintillation properties are shown by Tb 1.5 Gd 1.5 Al 3 Ga 2 O 12 :Ce SCFs. These SCFs possess the highest light yield (LY) ever obtained in our group for LPE grown garnet SCF scintillators exceeding by at least 10% the LY of previously reported Lu 1.5 Gd 1.5 Al 2.75 Ga 2.25 O 12 :Ce and Gd 3 Al 2-2.75 Ga 3-2.25 O 12 :Ce SCF scintillators, grown from BaO based flux. Under α-particles excitation, the Tb 1.5 Gd 1.5 Al 3 Ga 2 O 12 :Ce SCF show LY comparable with that of high-quality Gd 3 Al 2.5 Ga 2.5 O 12 :Ce single crystal (SC) scintillator with the LY above 10,000 photons/MeV but faster (at least by 2 times) scintillation decay times t 1/e and t 1/20 of 230 and 730 ns, respectively. The LY of Tb 1.5 Gd 1.5 Al 2.5 Ga 2.5 O 12 :Ce SCFs, grown from PbO flux, is comparable with the LY of their counterparts grown from BaO flux, but these SCFs possess slightly slower scintillation response with decay times t 1/e and t 1/20 of 330 and 990 ns, respectively. Taking into account that the SCFs of the Tb 1.5 Gd 1.5 Al 3-2.25 Ga 2-2.75 O 12 :Ce garnet can also be grown onto Ce 3+ doped GAGG substrates, the LPE method can also be used for the creation of the hybrid film-substrate scintillators for simultaneous registration of the different components of ionization fluxes.

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Section: Photoelectron Light Yield Measurementsmentioning

confidence: 84%

Section: Scintillation Decay Kineticsmentioning

confidence: 98%

Section: Scintillation Decay Kineticsmentioning

confidence: 98%

Section: Tsl Propertiesmentioning

confidence: 99%

Section: Tsl Propertiesmentioning

confidence: 99%

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LPE Growth of Single Crystalline Film Scintillators Based on Ce3+ Doped Tb3−xGdxAl5−yGayO12 Mixed Garnets

et al. 2017

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Inorganic Oxide Scintillators

Nakauchi¹,

Kawaguchi²,

Yanagida³

2022

Phosphors for Radiation Detectors

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Luminescent Properties of Nanopowder and Single‐Crystalline Films of TbAG:Ce Garnet

Bolek

Zeler

Gorbenko

et al. 2020

Physica Status Solidi (b)

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Herein, the luminescence properties of nanopowders (NPs), thin NP film and single‐crystalline film (SCF) of TbAG:Ce garnet are compared. The NPs are prepared by the combustion synthesis. NP films with thickness of 300 nm are prepared using the spin‐coating method. SCFs are grown by liquid phase epitaxy. Structure and morphology of NPs, NP films, and SCFs are studied using scanning electron microscopy and X‐ray diffraction. The luminescence properties of these samples are characterized by cathodoluminescence (CL) and photoluminescence (PL). CL spectra of the TbAG:Ce NP, NP films, and SCFs show the dominant Ce3+ emission in the garnet host. Meanwhile, in the PL spectra of NPs, the complex UV emission band is also observed. Its origin is related to 1) thermodynamic instability of TbAG garnet phase and formation of TbAP:Ce perovskite phase under conditions of NP preparation; 2) formation of UV emitting centers in both TbAG and TbAP hosts. This UV emission band is fully absent in TbAG:Ce SCF. Therefore, TbAG SCFs are useful objects for studying the luminescence of this garnet and different dopants in them. Furthermore, both TbAG:Ce NP films and SCFs are applicable for producing cathodoluminescent and scintillating screens with thickness in the μm/sub μm ranges.

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Scintillating screens based on the LPE grown Tb 3 Al 5 O 12 :Ce single crystalline films

Cited by 27 publications

References 16 publications

LPE Growth of Single Crystalline Film Scintillators Based on Ce3+ Doped Tb3−xGdxAl5−yGayO12 Mixed Garnets

LPE Growth of Single Crystalline Film Scintillators Based on Ce3+ Doped Tb3−xGdxAl5−yGayO12 Mixed Garnets

Inorganic Oxide Scintillators

Luminescent Properties of Nanopowder and Single‐Crystalline Films of TbAG:Ce Garnet

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