2022
DOI: 10.1039/d2cp04117k
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Schottky diodes based on blue phosphorene nanoribbon homojunctions

Abstract: Diodes have been widely studied as one of the most commonly used electronic components in circuits, and it is important to find diodes with excellent rectification performance. Herein, we investigate...

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Cited by 4 publications
(4 citation statements)
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“…Figure S2 gives the I–V characteristics of the IP and OP heterojunction diodes under a zero gate voltage in linear coordinates. It can be seen that the currents of the IP and OP diodes under negative bias voltages improve rapidly, especially with the bias voltage larger than 0.5 V, and the reversed currents under the positive bias voltages are negligible, exhibiting an ideal rectifying behavior, which is also observed in other Schottky diodes. , …”
Section: Resultsmentioning
confidence: 61%
See 1 more Smart Citation
“…Figure S2 gives the I–V characteristics of the IP and OP heterojunction diodes under a zero gate voltage in linear coordinates. It can be seen that the currents of the IP and OP diodes under negative bias voltages improve rapidly, especially with the bias voltage larger than 0.5 V, and the reversed currents under the positive bias voltages are negligible, exhibiting an ideal rectifying behavior, which is also observed in other Schottky diodes. , …”
Section: Resultsmentioning
confidence: 61%
“…It can be seen that the currents of the IP and OP diodes under negative bias voltages improve rapidly, especially with the bias voltage larger than 0.5 V, and the reversed currents under the positive bias voltages are negligible, exhibiting an ideal rectifying behavior, which is also observed in other Schottky diodes. 40,41 In order to quantitatively evaluate the rectifying behaviors, we calculate the rectification ratio (R) of the diodes: R…”
Section: Computational Detailsmentioning
confidence: 99%
“…In this study, the properties of interfaces formed by PtSe 2 and a series of 2D metals in both the vertical and lateral directions were systematically investigated using first-principles calculations. 43,70,71 We observed that in the lateral direction, PtSe 2 formed an n-type ohmic contact with Hf 2 C(OH) 2 /Nb 2 C(OH) 2 and a p-type ohmic contact with borophene/NbSe 2 /V 2 CF 2 /Nb 2 CO 2 . In addition, n-type Schottky contacts were formed for V 2 C(OH) 2 /Hf 2 CF 2 , and p-type Schottky contacts were formed for Nb 2 CF 2 /TaS 2 .…”
Section: Introductionmentioning
confidence: 91%
“…[65][66][67][68][69] In this study, the properties of interfaces formed by PtSe 2 and a series of 2D metals in both the vertical and lateral directions were systematically investigated using first-principles calculations. 43,70,71 We observed that in the lateral direction, PtSe…”
Section: Introductionmentioning
confidence: 93%