Schottky diode rectifier for power harvesting application

Abstract

This paper presents a study of rectifier prototype and diode modelization. The rectifying circuit with single Schottky diode HSMS-2860 at 2.45 GHz is proposed for energy harvesting applications. In such applications, the input power is very low, mainly about -20 dBm. Based on an analysis of matching circuit, the rectifiers with single stub matching circuit, with radial stubs low pass filter, or with compact structure were designed by using circuit simulation and co-simulation in ADS. The output DC voltages of 36.2 mV and the conversion efficiency of 1.3% were measured over a load resistance of 10 kΩ for -20 dBm microwave incident power.

Experimental Demonstration of Coexistence of Microwave Wireless Communication and Power Transfer Technologies for Battery-Free Sensor Network Systems

“…Table 2 summarizes these categories. Microwave rectifiers are a key device for realizing these systems, in particular diode-based microwave rectifiers [20][21][22][23]. These systems and rectifiers support only microwave WPT functions and do not coexist with communication functions.…”

State-of-the-Art Techniques in RF Energy Harvesting Circuits

“…When the rectified power i insufficient and there is a demand for further increasing voltage, a better approach is the use of stacking single rectifiers into series (Figure 9), making a voltage multiplier [6,44]. In [49] the authors manufactured a rectifier prototype with a single HSMS-Schottky diode at 2.45 GHz. The authors in [50] have designed a rectifier based o approach of a multiplier.…”

“…Also, to improve the efficiency of their circuit, they placed at the input of the circuit. As a result, they achieved an efficiency of 81.65% for 0 In [49] the authors manufactured a rectifier prototype with a single HSMS-2860 Schottky diode at 2.45 GHz. The authors in [50] have designed a rectifier based on the approach of a multiplier.…”

Experimental Characterization of Wearable Antennas and Circuits for RF Energy Harvesting in WBANs

“…10 from [6], it is noticeable that the measured return loss coefficient, S 11 , is extremely high which induces significant amount of reflection. One solution is to use a single stub matching circuit for improving both the output voltage and conversion efficiency and cancel the losses due to reflection, like in [12], as discussed in next section.…”

“…According to [12], the value of the impedance from Mica2 mote in the deep sleep state is 100 kΩ. The reference impedance load for the IRIS motes is also 100 kΩ.…”