Schottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theories

McLean, A. B.; Williams, R. H.

doi:10.1088/0022-3719/21/4/016

Cited by 81 publications

(16 citation statements)

References 83 publications

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“…For example, almost all metal/n-GaAs contacts are found to have a Schottky barrier height in the range of 0.7-0.9 eV. [3][4][5] Nine years after Schottky's paper was published, Bardeen proposed that the relative insensitivity of the metal work function to the Schottky barrier height is due to the presence of surface states in the semiconductor band gap. 6 This theory of Fermi level pinning is generally well accepted.…”

Section: Introductionmentioning

confidence: 99%

Pressure dependence of Cu, Ag, andFe/n−GaAsSchottky barrier heights

et al. 2001

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The Schottky barrier height of intimate Cu/GaAs ͑110͒, Ag/GaAs ͑110͒, and Fe/GaAs ͑100͒ has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and Ag/n-GaAs barrier heights of 97Ϯ4 meV/GPa fall within the uncertainty of the pressure dependence of the As Ga defect and track the predicted value of As Ga -rich interfaces. In contrast, the pressure dependence of the Fe/n-GaAs(100) Schottky barrier height of 109Ϯ7 meV/GPa does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

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Section: Introductionmentioning

confidence: 99%

Pressure dependence of Cu, Ag, andFe/n−GaAsSchottky barrier heights

et al. 2001

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“…Frequently, the SBH determined experimentally depends on the technique of measurement, e.g., SBH measured by C-V often exceeds that measured for the same diode by photo-response or I-V techniques. [145][146][147] That this is a necessary consequence of SBH inhomogeneity has long been realized. [148][149][150] For certain types of work, only the result of one type of SBH measurement is important, e.g., I-V measurement for ohmic contact development.…”

mentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,039

479

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The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

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“…As previously indicated, when directly comparing our own barrier-height value to Cu/n-GaAs values in the literature, the barrier-height value of 0.63 eV or 0.64 eV for the control sample CuG1 is very low compared to other diodes prepared on chemically prepared surfaces in the literature. For example, the barrier-height values of 0.82 eV, 25 0.78-0.88 eV (the carrier concentration of the used n-GaAs, N d ϭ 1 ϫ 10 16 cm Ϫ3 ), 27 and 0.83-0.92 eV (N d ϭ 2 ϫ 10 16 cm Ϫ3 ) 30 were reported from I-V characteristics. The experimental carrier concentration obtained from the C-V characteristics for control sample CuG1 in this study is about 2.10 ϫ 10 17 cm Ϫ3 .…”

Section: Resultsmentioning

confidence: 99%

The Cu/n-GaAs schottky barrier diodes prepared by anodization process

Bı̇ber

Türüt

2002

Journal of Elec Materi

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The metal-insulating semiconductor (MIS) Cu/n-GaAs diodes with thin anodic-insulating layer, which is formed by anodic oxidization on the n-GaAs substrate in aqueous 4C 2 H 6 O 2 ϩ 2H 2 O ϩ 0.1H 3 PO 4 electrolyte with pH ϭ 2.02; anodically untreated control Cu/n-GaAs diodes; and anodically treated Cu/nGaAs diodes (several steps of anodization in the same electrolyte followed by a dip in diluted aqueous HCl solution and a subsequent rinse in deionized water) have been prepared. The anodization has increased the barrier heights as well as the ideality factors. We have obtained barrier heights of approximately 0.68 eV, 0.90 eV, and 0.92 eV for the control sample, anodically treated sample, and MIS sample, respectively, adding the contribution caused by image-force effect only. Thus, the barrier height has been increased by at least 140 meV. Furthermore, we have calculated a mean tunneling-barrier height of ϭ 0.025 eV for the MIS Cu/n-GaAs Schottky barrier diode (SBD).

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Schottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theories

Cited by 81 publications

References 83 publications

Pressure dependence of Cu, Ag, andFe/n−GaAsSchottky barrier heights

Pressure dependence of Cu, Ag, andFe/n−GaAsSchottky barrier heights

The physics and chemistry of the Schottky barrier height

The Cu/n-GaAs schottky barrier diodes prepared by anodization process

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