Schottky barrier type diode with an electrochemically prepared copolymer having pyrrole and N-methylpyrrole units

Abstract

A Schottky type diode has been constructed with the electrochemically prepared copolymer having pyrrole and N-methylpyrrole units and a low work function metal (In). The heat treatment of the copolymer in air was performed in order to stabilize the electrical characteristics of the device before the deposition of a blocking electrode. The electrical properties have been investigated by means of I–V and C–V measurements. The diode quality factor and the barrier height have been obtained to be n=1.2 and ψb=0.81 V by applying a thermionic emission theory, respectively. At high current densities in the forward direction, a space-charge-limited current has been observed. This observation would be due to the charge-injection across the thin oxidized layer which would be formed during the heat treatment of the copolymer in air. Other junction parameters have been also determined by means of C–V measurements.

Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures

“…Namely, many devices using the polymeric [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] and nonpolymeric organic materials [17][18][19][20][21][22][23][24][25][26][27][28][29] have been fabricated including light emitting diodes and Schottky (Metal/Semiconductor = MS) type devices like an inorganic semiconductor/ organic semiconductor material or a metal/organic semiconductor material, and their electrical and photoelectrical properties have been investigated for more than three decades.…”

Indium/Polypyrrole(polypyrrole Derivatives) Schottky Junctions

“…It is evident from numerous publications on polypyrrole family of polymers, that it is one of the promising materials for device applications. Several reports are available on Indium-polyprrole (In-PPY) junctions [2][3][4][5] and almost all the workers have tried to explain the results on the basis of Richardson's equation of thermionic emission. Unfortunately, the charge transport mechanism has not been discussed in girth, in any of these reports.…”

Carbon Nanotube—Poly(3-Octylthiophene) Composite Photovoltaic Cells

“…Further, the I-V characteristics of these devices were fit to a standard exponential expression: J = J 0 Exp −eV/nkT − 1 , to determine the diode quality factor, n. (J is the current density, eV is the bias voltage, kT is the thermal energy at room temperature in our case). 12 The diodes with no nanotubes all have quality factors between 1 and 1.2. This increases, generally, with the addition of nanotubes and is a clear indication of modification to the separation interface by the addition of the nanophase.…”